IRF7526D1 International Rectifier, IRF7526D1 Datasheet - Page 6

• Manufacturer Part Number: IRF7526D1
• Description: MOSFET P-CH 30V 2A MICRO8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7526D1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7526D1
6
0.1
1 0
1
0.0
Fig. 12 -Typical Forward Voltage Drop
F orwa rd V oltage D ro p - V
0.2
Forward Voltage Drop - V
Characteristics
0.4
Schottky Diode Characteristics
0.6
T = 1 50°C
T = 1 25°C
T = 2 5°C
J
J
J
F
F M
(V)
0.8
(V )
1.0
0.0001
0.001
0.01
1 6 0
1 4 0
1 2 0
1 0 0
1 0 0
Fig.14 - Maximum Allowable Ambient
0.1
8 0
6 0
4 0
2 0
1 0
0
1
Fig. 13 - Typical Values of Reverse
0.0
A v era ge F orw ard C urrent - I
0
D = 3 /4
D = 1 /2
D = 1 /3
D = 1 /4
D = 1 /5
Current Vs. Reverse Voltage
Temp. Vs. Forward Current
T = 15 0 °C
0.5
J
5
R eve rse V o lta ge - V
1 0 0°C
1 2 5 °C
7 5°C
5 0 °C
2 5 °C
1.0
1 0
1.5
1 5
V = 8 0 % R ated
R
Sq uare w ave
r
t hJA
2.0
www.irf.com
2 0
= 1 0 0 °C /W
R
F(A V )
(V )
2.5
2 5
D C
(A )
3.0
3 0
A
A