IRF1010NSTRR International Rectifier, IRF1010NSTRR Datasheet

MOSFET N-CH 55V 85A D2PAK

IRF1010NSTRR

Manufacturer Part Number
IRF1010NSTRR
Description
MOSFET N-CH 55V 85A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF1010NS.pdf (11 pages)

Specifications of IRF1010NSTRR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 43A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
85A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
3210pF @ 25V
Power - Max
180W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF1010NSTRR
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
l
Absolute Maximum Ratings
Advanced HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for low-
profile applications.
www.irf.com
Thermal Resistance
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
D
D
DM
AR
2
J
STG
D
GS
AR
Pak is suitable for high current applications because of its
@ T
@ T
JC
JA
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
2
C
C
C
Pak is a surface mount power package capable of
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
®
Power MOSFETs from
Parameter
Parameter

ˆ
ƒˆ
GS
GS

@ 10V
@ 10V
ˆ
ˆ
G
300 (1.6mm from case )
Typ.
–––
–––
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
S
D
IRF1010NS
Max.
IRF1010NL
85
290
180
± 20
1.2
3.6
60
43
18
‡
IRF1010NS
D P ak
®
2
R
Power MOSFET
DS(on)
Max.
V
0.85
I
40
D
DSS
= 85A‡
PD - 94171
= 55V
= 11m
IRF1010NL
T O -26 2
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
02/14/02
1

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IRF1010NSTRR Summary of contents

Page 1

... Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF1010NS/IRF1010NL Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4. 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

IRF1010NS/IRF1010NL 6000 0V, C iss = rss = C gd 5000 C oss = Ciss 4000 3000 Coss 2000 1000 Crss 0 1 ...

Page 5

L IMITED BY PACKAGE 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05  SINGLE ...

Page 6

IRF1010NS/IRF1010NL Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q ...

Page 7

D.U.T + ‚ -  Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V Fig 14. For N-channel www.irf.com IRF1010NS/IRF1010NL Peak Diode ...

Page 8

IRF1010NS/IRF1010NL 2 D Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055 1.78 (.070) 15.49 (.610) 1.27 (.050) 14.73 (.580 1.40 (.055) 3X 1.14 (.045) 0.93 (.037) 3X 0.69 (.027) 5.08 ...

Page 9

Package Outline TO-262 Outline Part Marking Information TO-262 www.irf.com IRF1010NS/IRF1010NL 9 ...

Page 10

IRF1010NS/IRF1010NL Tape & Reel Information 2 D Pak TIO (. (. ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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