IRF1405S International Rectifier, IRF1405S Datasheet

MOSFET N-CH 55V 131A D2PAK

IRF1405S

Manufacturer Part Number
IRF1405S
Description
MOSFET N-CH 55V 131A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF1405S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.3 mOhm @ 101A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
131A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
5480pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF1405S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1405S
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF1405SPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF1405SPBF
Quantity:
95
Part Number:
IRF1405STRLPBF
Manufacturer:
IR
Quantity:
6 102
Part Number:
IRF1405STRRPBF
Manufacturer:
IR
Quantity:
8 936
Benefits
Description
Absolute Maximum Ratings
Thermal Resistance
Typical Applications
Stripe Planar design of HEXFET
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θJA
@ T
@ T
@T
Electric Power Steering (EPS)
Anti-lock Braking System (ABS)
Wiper Control
Climate Control
Power Door
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Parameter
Parameter
®
Power MOSFETs
AUTOMOTIVE MOSFET
GS
GS
@ 10V
@ 10V
ˆ
G
IRF1405S
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
D
–––
–––
2
HEXFET
Pak
10 lbf•in (1.1N•m)
-55 to + 175
D
S
131†
Max.
93†
680
200
± 20
590
1.3
5.0
®
R
IRF1405L
Power MOSFET
TO-262
DS(on)
Max.
I
V
0.75
D
40
DSS
= 131A†
IRF1405S
IRF1405L
= 5.3mΩ
= 55V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

Related parts for IRF1405S

IRF1405S Summary of contents

Page 1

... Soldering Temperature, for 10 seconds Mounting Torque, 6- screw Thermal Resistance Parameter R Junction-to-Case θJC R Junction-to-Ambient (PCB mount) θJA www.irf.com AUTOMOTIVE MOSFET G Power MOSFETs IRF1405S @ 10V GS @ 10V GS ˆ IRF1405S IRF1405L ® HEXFET Power MOSFET 55V DSS R = 5.3mΩ DS(on 131A† Pak TO-262 IRF1405L Max ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 1 ...

Page 5

LIMITED BY PACKAGE 120 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 TOP Single Pulse BOTTOM 10% Duty Cycle 500 101A 400 300 200 100 0 25 ...

Page 8

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent For N-channel 8 + • • ƒ • - „ - • • • P.W. Period D ...

Page 9

T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 EMBLY LINE "L" Note: "P" in assembly line position indicates "Lead-Free" OR www.irf.com (Dimensions are shown in ...

Page 10

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 ASS EMBLY LINE "C" Note: "P" in assembly line pos ition indicates "Lead-Free" ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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