IRF3415STRR International Rectifier, IRF3415STRR Datasheet
IRF3415STRR
Specifications of IRF3415STRR
Related parts for IRF3415STRR
IRF3415STRR Summary of contents
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... Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ...
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IRF3415S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 20us PULSE WIDTH Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...
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IRF3415S/L 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss C ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) ...
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IRF3415S Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...
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Peak Diode Recovery dv/dt Test Circuit + D.U dv/dt controlled Driver same type as D.U. D.U.T. - Device Under Test Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery ...
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IRF3415S Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 ...
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Package Outline TO-262 Outline Part Marking Information TO-262 IRF3415S/L ...
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IRF3415S/L Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...