IRF3415STRR International Rectifier, IRF3415STRR Datasheet - Page 6

• Manufacturer Part Number: IRF3415STRR
• Description: MOSFET N-CH 150V 43A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3415STRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF3415S/L
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
10 V
Fig 13a. Basic Gate Charge Waveform
I
V
A S
G
Q
R G
2 0 V
GS
V D S
t p
Q
Charge
Q
I A S
t p
D .U .T
GD
G
0 .0 1
L
V
(B R )D SS
1 5 V
D R IV E R
+
-
V D D
A
1400
1200
1000
800
600
400
200
0
25
Fig 12c. Maximum Avalanche Energy
12V
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature ( C)
V
GS
50
Same Type as D.U.T.
Current Regulator
.2 F
Vs. Drain Current
J
75
50K
3mA
Current Sampling Resistors
.3 F
100
I
G
125
TOP
BOTTOM
D.U.T.
I
D
150
+
o
-
V
9.0A
I D
16A
22A
DS
175