IRF7807D1TR International Rectifier, IRF7807D1TR Datasheet

IRF7807D1TR

Manufacturer Part Number

IRF7807D1TR

Description

MOSFET N-CH 30V 8.3A 8-SOIC

Manufacturer

International Rectifier

Series

FETKY™r

Datasheet

1.IRF7807D1.pdf (8 pages)

Specifications of IRF7807D1TR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

25 mOhm @ 7A, 4.5V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

8.3A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

17nC @ 5V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7807D1TR

Quantity:

1 700

Current page: 1 of 8
Download datasheet (118Kb)

• Co-Pack N-channel HEXFET Power MOSFET

• Ideal for Synchronous Rectifiers in DC-DC

• Low Conduction Losses

• Low Switching Losses

• Low Vf Schottky Rectifier

Description

The FETKY

Schottky diodes offers the designer an innovative, board

space saving solution for switching regulator and power

management applications. HEXFET power MOSFETs

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. Combining

this technology with International Rectifier’s low forward

drop Schottky rectifiers results in an extremely efficient

device suitable for use in a wide variety of portable

electronics applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics. The SO-

8 package is designed for vapor phase, infrared or wave

soldering techniques.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V

Pulsed Drain Current

Power Dissipation

Schottky and Body Diode

Average ForwardCurrent

Junction & Storage Temperature Range

Parameter

Maximum Junction-to-Ambient

and Schottky Diode

Converters Up to 5A Output

™

family of Co-Pack HEXFET MOSFETs and

4.5V)

25°C

70°C

25°C

70°C

25°C

Symbol

, T

(AV)

STG

FETKY™ MOSFET / SCHOTTKY DIODE

SO-8

Device Features (Max Values)

–55 to 150

Max.

±12

8.3

6.6

2.5

1.6

3.5

2.2

DS(on)

oss

IRF7807D1

A/S

IRF7807D1

25m

5.2nC

18.4nC

14nC

30V

Top View

PD- 93761

Units

°C/W

°C

K/D

11/8/99

Related parts for IRF7807D1TR

IRF7807D1TR Summary of contents

Page 1

... HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. ...

Page 2

IRF7807D1 Electrical Characteristics Parameter Drain-to-Source V (BR)DSS Breakdown Voltage* Static Drain-Source R (on Resistance* Gate Threshold Voltage* V (th) GS Drain-Source Leakage I DSS Current* Gate-Source Leakage I GSS Current* Total Gate Charge Q gsync Synch FET* Total ...

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IRF7807D1TR International Rectifier, IRF7807D1TR Datasheet

IRF7807D1TR

Specifications of IRF7807D1TR

Available stocks

Related parts for IRF7807D1TR

IRF7807D1TR Summary of contents

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