IRFL1006TR International Rectifier, IRFL1006TR Datasheet

IRFL1006TR

Manufacturer Part Number

IRFL1006TR

Description

MOSFET N-CH 60V 1.6A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFL1006.pdf (9 pages)

Specifications of IRFL1006TR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

220 mOhm @ 1.6A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

1.6A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

8nC @ 10V

Input Capacitance (ciss) @ Vds

160pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFL1006TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 9
Download datasheet (128Kb)

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

Thermal Resistance

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

www.irf.com

dv/dt

@ T

Surface Mount

Advanced Process Technology

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated

STG

= 25°C

= 70°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy *

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)*

Junction-to-Amb. (PCB Mount, steady state)**

Parameter

@ 10V**

@ 10V*

Typ.

HEXFET

-55 to + 150

S O T -2 2 3

Max.

± 20

2.3

1.6

1.3

6.4

1.0

8.3

5.0

2.1

1.6

0.1

IRFL1006

Max.

Power MOSFET

120

DS(on)

DSS

= 1.6A

= 0.22

= 60V

PD - 91876

Units

mW/°C

Units

°C/W

V/ns

°C

3/29/99

Related parts for IRFL1006TR

IRFL1006TR Summary of contents

Page 1

... Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRFL1006 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRFL1006TR International Rectifier, IRFL1006TR Datasheet

IRFL1006TR

Specifications of IRFL1006TR

Available stocks

Related parts for IRFL1006TR

IRFL1006TR Summary of contents

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