MOSFET P-CH 55V 11A DPAK

IRFR9024NTRL

Manufacturer Part NumberIRFR9024NTRL
DescriptionMOSFET P-CH 55V 11A DPAK
ManufacturerInternational Rectifier
SeriesHEXFET®
IRFR9024NTRL datasheet
 


Specifications of IRFR9024NTRL

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs175 mOhm @ 6.6A, 10VDrain To Source Voltage (vdss)55V
Current - Continuous Drain (id) @ 25° C11AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs19nC @ 10VInput Capacitance (ciss) @ Vds350pF @ 25V
Power - Max38WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
Page 2/11

Download datasheet (124Kb)Embed
PrevNext
IRFR/U9024N
Electrical Characteristics @ T
Parameter
V
Drain-to-Source Breakdown Voltage
(BR)DSS
Breakdown Voltage Temp. Coefficient
V
/ T
(BR)DSS
J
R
Static Drain-to-Source On-Resistance
DS(on)
V
Gate Threshold Voltage
GS(th)
g
Forward Transconductance
fs
I
Drain-to-Source Leakage Current
DSS
Gate-to-Source Forward Leakage
I
GSS
Gate-to-Source Reverse Leakage
Q
Total Gate Charge
g
Q
Gate-to-Source Charge
gs
Q
Gate-to-Drain ("Miller") Charge
gd
t
Turn-On Delay Time
d(on)
t
Rise Time
r
t
Turn-Off Delay Time
d(off)
t
Fall Time
f
L
Internal Drain Inductance
D
L
Internal Source Inductance
S
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
Source-Drain Ratings and Characteristics
Parameter
I
Continuous Source Current
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
Diode Forward Voltage
SD
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
t
Forward Turn-On Time
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
= 25°C, L = 2.8mH
J
R
= 25 , I
= -6.6A. (See Figure 12)
G
AS
I
-6.6A, di/dt
240A/µs, V
SD
T
150°C
J
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
= 25°C (unless otherwise specified)
J
Min. Typ. Max. Units
-55
–––
–––
-0.05 –––
–––
––– 0.175
-2.0
–––
2.5
–––
–––
–––
–––
––– -250
–––
–––
–––
––– -100
–––
–––
–––
–––
–––
–––
–––
13
–––
55
–––
23
–––
37
4.5
–––
–––
7.5
–––
350
–––
170
–––
92
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
47
–––
84
Intrinsic turn-on time is negligible (turn-on is dominated by L
Pulse width
This is applied for I-PAK, L
lead and center of die contact
Uses IRF9Z24N data and test conditions.
V
,
DD
(BR)DSS
Conditions
–––
V
V
= 0V, I
= -250µA
GS
D
V/°C
Reference to 25°C, I
V
= -10V, I
= -6.6A
GS
D
-4.0
V
V
= V
, I
= -250µA
DS
GS
D
–––
S
V
= -25V, I
= -7.2A
DS
D
-25
V
= -55V, V
= 0V
DS
GS
µA
V
= -44V, V
= 0V, T
DS
GS
100
V
= 20V
GS
nA
V
= -20V
GS
19
I
= -7.2A
D
5.1
nC
V
= -44V
DS
10
V
= -10V, See Fig. 6 and 13
GS
–––
V
= -28V
DD
–––
I
= -7.2A
D
ns
–––
R
= 24
G
–––
R
= 3.7
See Fig. 10
D
Between lead,
–––
6mm (0.25in.)
nH
from package
–––
and center of die contact
–––
V
= 0V
GS
–––
pF
V
= -25V
DS
–––
ƒ = 1.0MHz, See Fig. 5
Conditions
MOSFET symbol
-11
showing the
A
integral reverse
-44
p-n junction diode.
-1.6
V
T
= 25°C, I
= -7.2A, V
J
S
71
ns
T
= 25°C, I
= -7.2A
J
F
130
nC
di/dt = 100A/µs
300µs; duty cycle
2%.
of D-PAK is measured between
S
= -1mA
D
= 150°C
J
D
G
S
D
G
S
= 0V
GS
+L
)
S
D