IRFZ44NSTRR International Rectifier, IRFZ44NSTRR Datasheet

IRFZ44NSTRR

Manufacturer Part Number

IRFZ44NSTRR

Description

MOSFET N-CH 55V 49A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFZ44NS.pdf (11 pages)

Specifications of IRFZ44NSTRR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

17.5 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

49A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

63nC @ 10V

Input Capacitance (ciss) @ Vds

1470pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

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Description

Advanced HEXFET

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in

any existing surface mount package. The D

for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a

typical surface mount application.

The through-hole version (IRFZ44NL) is available for low-

profile applications.

Thermal Resistance

dv/dt

STG

@ T

Advanced Process Technology

Surface Mount (IRFZ44NS)

Low-profile through-hole (IRFZ44NL)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient

Power MOSFETs from International

Parameter

Pak is suitable

@ 10V

300 (1.6mm from case )

Typ.

–––

HEXFET

-55 to + 175

Max.

0.63

160

± 20

3.8

9.4

5.0

IRFZ44NS

IRFZ44NL

D P ak

DS(on)

Power MOSFET

Max.

1.5

DSS

= 49A

= 0.0175

= 55V

PD - 94153

T O -26 2

03/13/01

Units

W/°C

°C/W

V/ns

°C

Related parts for IRFZ44NSTRR

IRFZ44NSTRR Summary of contents

Page 1

Advanced Process Technology l l Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature l l Fast Switching Fully Avalanche Rated l Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low ...

Page 2

IRFZ44NS/IRFZ44NL Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS ...

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IRFZ44NSTRR International Rectifier, IRFZ44NSTRR Datasheet

IRFZ44NSTRR

Specifications of IRFZ44NSTRR

Related parts for IRFZ44NSTRR

IRFZ44NSTRR Summary of contents

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