IRL1104STRR International Rectifier, IRL1104STRR Datasheet

IRL1104STRR

Manufacturer Part Number

IRL1104STRR

Description

MOSFET N-CH 40V 104A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRL1104S.pdf (11 pages)

Specifications of IRL1104STRR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

8 mOhm @ 62A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

104A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

68nC @ 4.5V

Input Capacitance (ciss) @ Vds

3445pF @ 25V

Power - Max

2.4W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Current page: 1 of 11
Download datasheet (198Kb)

Description

Absolute Maximum Ratings

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-resistance

in any existing surface mount package. The D

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0W

in a typical surface mount application.

The through-hole version (IRL1104L) is available for low-

profile applications.

www.irf.com

dv/dt

STG

@ T

Logic-Level Gate Drive

Advanced Process Technology

Surface Mount (IRL1104S)

Low-profile through-hole (IRL1104L)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient(PCB Mounted,steady-state)**

Parameter

PRELIMINARY

Pak is

@ 10V

300 (1.6mm from case )

Typ.

–––

D P ak

HEXFET

-55 to + 175

IRL1104S/L

Max.

104

416

167

340

2.4

1.1

±16

5.0

T O -26 2

Power MOSFET

DS(on)

Max.

0.9

DSS

= 104A

= 0.008

= 40V

PD -91840

Units

W/°C

°C/W

V/ns

°C

10/28/98

Related parts for IRL1104STRR

IRL1104STRR Summary of contents

Page 1

... Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRL1104S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Related keywords

irl1104
irl11
irl1104l
IRL1104STRR datasheet
IRL1104STRR data sheet
IRL1104STRR pdf datasheet
IRL1104STRR component
IRL1104STRR part
IRL1104STRR distributor
IRL1104STRR RoHS
IRL1104STRR datasheet download

IRL1104STRR International Rectifier, IRL1104STRR Datasheet

IRL1104STRR

Specifications of IRL1104STRR

Related parts for IRL1104STRR

IRL1104STRR Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Page 6

Page 7

Page 8

Page 9

Page 10

Page 11

Related keywords