MOSFET N-CH 40V 104A D2PAK

IRL1104STRR

Manufacturer Part NumberIRL1104STRR
DescriptionMOSFET N-CH 40V 104A D2PAK
ManufacturerInternational Rectifier
SeriesHEXFET®
IRL1104STRR datasheet
 


Specifications of IRL1104STRR

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs8 mOhm @ 62A, 10VDrain To Source Voltage (vdss)40V
Current - Continuous Drain (id) @ 25° C104AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs68nC @ 4.5VInput Capacitance (ciss) @ Vds3445pF @ 25V
Power - Max2.4WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
Page 1/11

Download datasheet (198Kb)Embed
Next
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL1104S)
Low-profile through-hole (IRL1104L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
2
The D
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-resistance
in any existing surface mount package. The D
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRL1104L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Junction-to-Ambient(PCB Mounted,steady-state)**
JA
www.irf.com
IRL1104S/L
PRELIMINARY
HEXFET
D
G
S
2
2
Pak is
D P ak
Max.
@ 10V
104
GS
@ 10V
74
GS
416
167
340
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
PD -91840
®
Power MOSFET
V
= 40V
DSS
R
= 0.008
DS(on)
I
= 104A
D
T O -26 2
Units
A
2.4
W
W
1.1
W/°C
±16
V
mJ
62
A
17
mJ
5.0
V/ns
°C
Max.
Units
0.9
°C/W
62
1
10/28/98

IRL1104STRR Summary of contents

  • Page 1

    ... Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

  • Page 2

    IRL1104S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

  • Page 3

    VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 100 10 2.7V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...

  • Page 4

    IRL1104S/L 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss 1000 ...

  • Page 5

    LIMITED BY PACKAGE 100 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE ...

  • Page 6

    IRL1104S 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G 4.5 ...

  • Page 7

    D.U Driver Gate Drive P.W. D.U. Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFETS www.irf.com Peak Diode Recovery ...

  • Page 8

    IRL1104S Pak Package Details 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 ...

  • Page 9

    TO-262 Package Details Part Marking www.irf.com IRL1104S/L 9 ...

  • Page 10

    IRL1104S Pak Tape and Reel IRE CTIO (. (. IRE C ...

  • Page 11

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...