IRLR014NTR International Rectifier, IRLR014NTR Datasheet

MOSFET N-CH 55V 10A DPAK

IRLR014NTR

Manufacturer Part Number
IRLR014NTR
Description
MOSFET N-CH 55V 10A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLR014NTRL.pdf (11 pages)

Specifications of IRLR014NTR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
140 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
7.9nC @ 5V
Input Capacitance (ciss) @ Vds
265pF @ 25V
Power - Max
28W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
H&T Electronics H&T Electronics
Part Number:
IRLR014NTRPBF
Quantity:
15 045
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
R
R
R
I
I
I
P
V
E
I
E
dv/dt
T
T
D
D
DM
AR
STG
D
GS
AS
AR
J
@ T
@ T
JC
JA
JA
Logic-Level Gate Drive
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
@T
For recommended footprint and soldering techniques refer to application note #AN-994
C
C
C
= 25°C
= 100°C
= 25°C
Peak Diode Recovery dv/dt
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
HEXFET
S
D
IRLR/U014N
-55 to + 175
Max.
± 16
7.1
0.2
6.0
2.8
5.0
28
10
40
35
TO-252AA
®
R
D-Pak
Power MOSFET
DS(on)
Max.
V
110
5.3
50
DSS
I
D
= 10A
= 55V
= 0.14
TO-251AA
PD- 94350
I-Pak
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
5/4/99

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IRLR014NTR Summary of contents

Page 1

... Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications ...

Page 2

IRLR/U014N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS VGS TOP 15V TOP 15V 10V 12V 5.0V 10V 4.5V 7.0V 3.5V 5.0V 3.0V 4.5V 2.7V 2.7V BOTTOM 2.0V BOTTOM 2. 2.5V 20µs PULSE WIDTH 0.1 0 ...

Page 4

IRLR/U014N 500 1MHz iss rss iss 400 oss ds gd 300 C oss 200 C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 1 0.10 0.05 SINGLE PULSE (THERMAL RESPONSE) 0.02 0.01 ...

Page 6

IRLR/U014N D.U 10V 20V 0. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

D.U Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS www.irf.com Peak Diode Recovery dv/dt Test Circuit ...

Page 8

IRLR/U014N Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 3X 1.14 (.045) 2X 0.76 (.030) ...

Page 9

Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250 5.46 (.215) 5.21 (.205) 4 6.22 (.245) 1.52 (.060) 5.97 (.235) 1.15 (.045 2.28 (.090) 9.65 (.380) ...

Page 10

IRLR/U014N Tape & Reel Information TO-252AA Dimensions are shown in millimeters (inches) TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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