IRLR024NTRL International Rectifier, IRLR024NTRL Datasheet

IRLR024NTRL

Manufacturer Part Number

IRLR024NTRL

Description

MOSFET N-CH 55V 17A DPAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRLU024N.pdf (11 pages)

Specifications of IRLR024NTRL

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

65 mOhm @ 10A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

17A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

15nC @ 5V

Input Capacitance (ciss) @ Vds

480pF @ 25V

Power - Max

45W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRLR024NTRL

Manufacturer:

INTERNATIONAL RECTIFIER

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRLR024NTRL

Manufacturer:

Quantity:

6 244

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRLR024NTRLPBF

Manufacturer:

INTERNATIONAL RECTIFIER

Quantity:

30 000

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Description

Fifth Generation HEXFET

utilize advanced processing techniques to achieve the lowest possible on-

resistance per silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient device for use in

a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

Absolute Maximum Ratings

Thermal Resistance

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

www.irf.com

dv/dt

STG

For recommended footprint and soldering techniques refer to application note #AN-994

@ T

Logic-Level Gate Drive

Surface Mount (IRLR024N)

Straight Lead (IRLU024N)

Advanced Process Technology

Fast Switching

Fully Avalanche Rated

= 100°C

= 25°C

Junction-to-Case

Case-to-Ambient (PCB mount)**

Junction-to-Ambient

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Power MOSFETs from International Rectifier

Parameter

@ 10V

Typ.

300 (1.6mm from case )

–––

HEXFET

-55 to + 175

Max.

± 16

0.3

4.5

5.0

D-Pak

IRLR024N IRLU024N

Power MOSFET

DS(on)

Max.

110

3.3

DSS

IRLR024N

IRLU024N

= 17A

PD- 91363E

= 0.065

= 55V

I-Pak

Units

°C/W

W/°C

V/ns

°C

2/10/00

Related parts for IRLR024NTRL

IRLR024NTRL Summary of contents

Page 1

... Fully Avalanche Rated Description ® Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications ...

Page 2

IRLR/U024N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRLR024NTRL International Rectifier, IRLR024NTRL Datasheet

IRLR024NTRL

Specifications of IRLR024NTRL

Available stocks

Related parts for IRLR024NTRL

IRLR024NTRL Summary of contents

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