IRLR024NTRR International Rectifier, IRLR024NTRR Datasheet
IRLR024NTRR
Specifications of IRLR024NTRR
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IRLR024NTRR Summary of contents
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... Fully Avalanche Rated Description ® Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications ...
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IRLR/U024N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2. 2.5 V 20µ 5°C J 0.1 0 ...
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IRLR/U024N ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature ...
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IRLR/U024N Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...
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D.U Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel www.irf.com Peak Diode ...
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IRLR/U024N D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (.2 0 ...
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I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...
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IRLR/U024N D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...