SI4420DYTR International Rectifier, SI4420DYTR Datasheet

SI4420DYTR

Manufacturer Part Number

SI4420DYTR

Description

MOSFET N-CH 30V 12.5A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.SI4420DY.pdf (8 pages)

Specifications of SI4420DYTR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

9 mOhm @ 12.5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

12.5A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

78nC @ 10V

Input Capacitance (ciss) @ Vds

2240pF @ 15V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4420DYTR

Manufacturer:

INTTRNAT

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4420DYTRPBF

Manufacturer:

International Rectifier

Quantity:

25 338

Current page: 1 of 8
Download datasheet (112Kb)

Description

Absolute Maximum Ratings

Thermal Resistance

This N-channel HEXFET

using International Rectifier's advanced HEXFET power

MOSFET technology. The low on-resistance and low gate

charge inherent to this technology make this device ideal

for low voltage or battery driven power conversion

applications

The SO-8 package with copper leadframe offers enhanced

thermal characteristics that allow power dissipation of

greater that 800mW in typical board mount applications.

www.irf.com

@ T

N-Channel MOSFET

Low On-Resistance

Low Gate Charge

Surface Mount

Logic Level Drive

STG

= 25°C

= 70°C

= 25°C

= 70°C

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy

Gate-to-Source Voltage

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

power MOSFET is produced

Parameter

@ 10V

T o p V ie w

HEXFET

-55 to + 150

Max.

±12.5

0.02

±10

±50

400

± 20

2.5

1.6

SO-8

Si4420DY

Power MOSFET

DS(on)

DSS

= 0.009

PD - 93835

= 30V

Units

W/°C

°C/W

°C

1/3/2000

Related parts for SI4420DYTR

SI4420DYTR Summary of contents

Page 1

... Logic Level Drive Description ® This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications ...

Page 2

Si4420DY Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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SI4420DYTR International Rectifier, SI4420DYTR Datasheet

SI4420DYTR

Specifications of SI4420DYTR

Available stocks

Related parts for SI4420DYTR

SI4420DYTR Summary of contents

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Page 2

Page 3

Page 4

Page 5

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Page 8

Related keywords