IRF7523D1TR International Rectifier, IRF7523D1TR Datasheet
IRF7523D1TR
Specifications of IRF7523D1TR
Available stocks
Related parts for IRF7523D1TR
IRF7523D1TR Summary of contents
Page 1
... Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. ...
Page 2
IRF7523D1 MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q ...
Page 3
VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3. 0.1 0 rain-to-S ource V oltage ( Fig 1. Typical Output Characteristics ...
Page 4
IRF7523D1 2 1.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction T em perature (° Fig 5. Normalized On-Resistance Vs. Temperature /5 Fig 7. Typical On-Resistance ...
Page 5
iss rss oss ds gd 300 ...
Page 6
IRF7523D1 Schottky Diode Characteristics 0.1 0.0 0.2 0.4 0 lta Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteris- tics ...
Page 7
TM Micro8 Package Details 0 ...
Page 8
IRF7523D1 TM Micro8 Tape & Reel 8 7 ...