IRF7526D1TR International Rectifier, IRF7526D1TR Datasheet

IRF7526D1TR

Manufacturer Part Number

IRF7526D1TR

Description

MOSFET P-CH 30V 2A MICRO8

Manufacturer

International Rectifier

Series

FETKY™r

Datasheet

1.IRF7526D1.pdf (8 pages)

Specifications of IRF7526D1TR

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

200 mOhm @ 1.2A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

11nC @ 10V

Input Capacitance (ciss) @ Vds

180pF @ 25V

Power - Max

1.25W

Mounting Type

Surface Mount

Package / Case

Micro8™

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7526D1TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 8
Download datasheet (121Kb)

The FETKY

designer an innovative board space saving solution for switching regulator

applications. Generation 5 HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area. Combining this technology

with International Rectifier's low forward drop Schottky rectifiers results in an

extremely efficient device suitable for use in a wide variety of portable electronics

applications like cell phone, PDA, etc.

The new Micro8

the smallest footprint available in an SOIC outline. This makes the Micro8

device for applications where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro8

environments such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings

Thermal Resistance Ratings

Notes:

Description

www.irf.com

Parameter

dv/dt

Pulse width

Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)

Co-packaged HEXFET Power

MOSFET and Schottky Diode

P-Channel HEXFET

Generation 5 Technology

Micro8

@ T

When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance

Low V

STG

-1.2A, di/dt

= 25°C

= 70°C

= 25°C

= 70°C

Schottky Rectifier

Footprint

family of co-packaged HEXFETs and Schottky diodes offer the

300µs – duty cycle

package, with half the footprint area of the standard SO-8, provides

160A/µs, V

Parameter

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Junction-to-Ambient

will allow it to fit easily into extremely thin application

(BR)DSS

, T

150°C

@ -4.5V

FETKY

T op V ie w

MOSFET & Schottky Diode

an ideal

-55 to +150

Maximum

IRF7526D1

Maximum

1.25

± 20

-2.0

-1.6

-5.0

-16

0.8

100

Schottky Vf = 0.39V

DS(on)

DSS

Micro8

PD -91649C

= -30V

= 0.20

Units

mW/°C

°C/W

Units

V/ns

°C

5/7/99

Related parts for IRF7526D1TR

IRF7526D1TR Summary of contents

Page 1

... Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. ...

Page 2

... Max. Forward voltage drop FM I Max. Reverse Leakage current RM C Max. Junction Capacitance t dv/dt Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET 25°C (unless otherwise specified) J Min. Typ. Max. Units Conditions -30 ––– ––– V ...

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IRF7526D1TR International Rectifier, IRF7526D1TR Datasheet

IRF7526D1TR

Specifications of IRF7526D1TR

Available stocks

Related parts for IRF7526D1TR

IRF7526D1TR Summary of contents

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