IRFB42N20D International Rectifier, IRFB42N20D Datasheet
IRFB42N20D
Specifications of IRFB42N20D
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IRFB42N20D Summary of contents
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... Mounting torqe, 6- screw Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA Notes through are on page 8 www.irf.com IRFB42N20D SMPS MOSFET HEXFET V DSS 200V @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 – ...
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... IRFB42N20D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...
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... Fig 2. Typical Output Characteristics 3 3.0 2.5 2.0 1.5 1.0 0.5 = 50V 0 -60 -40 -20 0 Fig 4. Normalized On-Resistance IRFB42N20D VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 5.0V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 44A V = 10V ...
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... IRFB42N20D 100000 0V MHZ C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 0.1 0.2 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 1000 0 Fig 6. Typical Gate Charge Vs. ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 t , Rectangular Pulse Duration (sec) 1 IRFB42N20D D.U. 10V µ d(off ...
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... IRFB42N20D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 1000 1 5V 800 600 + 400 200 0 25 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit I D TOP ...
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... Ground Plane Low Leakage Inductance Current Transformer - - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® Power MOSFETs IRFB42N20D + =10V ...
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... IRFB42N20D TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.5 4 (.4 15) 10.2 9 (.4 05) 2.87 (.11 3) 2.62 (. .24 (. .84 (. 14.09 (. 13.47 (. 1.40 (. 1.15 (. (.1 00 IME & 14 82 LLIN TO-220AB Part Marking Information Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T = 25° 1.45mH ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...