IRLR3714 International Rectifier, IRLR3714 Datasheet

MOSFET N-CH 20V 36A DPAK

IRLR3714

Manufacturer Part Number
IRLR3714
Description
MOSFET N-CH 20V 36A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR3714

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
9.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
670pF @ 10V
Power - Max
47W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR3714

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Part Number
Manufacturer
Quantity
Price
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IRLR3714
Manufacturer:
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15 045
Absolute Maximum Ratings
Thermal Resistance
Benefits
l
l
l
www.irf.com
l
l
Applications
Notes  through … are on page 10
Symbol
V
V
I
I
I
P
P
T
R
R
R
D
D
DM
DS
GS
D
D
J
@ T
@ T
JC
JA
JA
, T
and Current
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
@T
@T
High Frequency Isolated DC-DC
High Frequency Buck Converters for
Converters with Synchronous Rectification
for Telecom and Industrial Use
Computer Processor Power
STG
C
C
C
C
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-Source Voltage
Gate-to-Source Voltage
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Continuous Drain Current, V
Continuous Drain Current, V
Linear Derating Factor
at 4.5V V
Parameter
Parameter
GS

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
V
20V
DSS
Typ.
–––
–––
–––
HEXFET
-55 to + 175
R
IRLR3714
D-Pak
DS(on)
Max.
± 20
0.31
140
20
31
47
33
36
20m
®
IRLR3714
IRLU3714
Power MOSFET
Max.
110
max
3.2
50
IRLU3714
PD - 94266
I-Pak
Units
Units
°C/W
06/15/01
W/°C
36A
°C
V
W
W
I
V
A
D
1

Related parts for IRLR3714

IRLR3714 Summary of contents

Page 1

... DSS 20V GS @ 10V GS @ 10V GS  ƒ ƒ Typ. „ 94266 IRLR3714 IRLU3714 ® HEXFET Power MOSFET R max I DS(on) 20m 36A D-Pak I-Pak IRLR3714 IRLU3714 Max. Units 20 V ± … 140 0.31 W/°C - 175 °C Max. Units ––– 3.2 °C/W – ...

Page 2

... IRLR3714/IRLU3714 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000. 25°C 100.00 10. 15V 20µs PULSE WIDTH 1.00 2.0 4.0 6 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRLR3714/IRLU3714 1000 TOP 100 BOTTOM 2. 0.1 0.1 10 100 Fig 2. Typical Output Characteristics 2 2 175°C 1.5 1 ...

Page 4

... IRLR3714/IRLU3714 10000 0V MHZ C iss = rss = oss = 1000 Ciss Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000. 175°C 100.00 10. 25°C 1.00 0.10 0.0 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 Fig 6. Typical Gate Charge Vs. ...

Page 5

... D = 0.50 1 0.20 0.10 0.05  SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.1 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRLR3714/IRLU3714 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 10% ° Fig 10b. Switching Time Waveforms  0.001 0.01 ...

Page 6

... IRLR3714/IRLU3714 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 150 120 Starting T , Junction Temperature Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit  I D TOP 5.9A BOTTOM 75 100 ...

Page 7

... Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET www.irf.com IRLR3714/IRLU3714 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane ƒ Low Leakage Inductance Current Transformer - „ - dv/dt controlled Driver same type as D ...

Page 8

... IRLR3714/IRLU3714 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (. (. (. 1 1 D-Pak (TO-252AA) Part Marking Information (. (. (. (. (. (. & (. (. (. (. (. (. (. (. (. (. www.irf.com ...

Page 9

... I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (. (. (. (. (. 2 1 I-Pak (TO-251AA) Part Marking Information www.irf.com IRLR3714/IRLU3714 (. (. (. (. (. (. (. (. & (. (. (. .58 (. .46 (. ...

Page 10

... IRLR3714/IRLU3714 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches 12 11 LLIN G D IME ILL ILLIM -481 & - -481 . Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0. 14A ƒ Pulse width 400µs; duty cycle These products have been designed and qualified for the Industrial market ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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