IRF7707TR International Rectifier, IRF7707TR Datasheet

MOSFET P-CH 20V 7A 8-TSSOP

IRF7707TR

Manufacturer Part Number
IRF7707TR
Description
MOSFET P-CH 20V 7A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7707TR

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
47nC @ 4.5V
Input Capacitance (ciss) @ Vds
2361pF @ 15V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7707TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7707TRPBF
Manufacturer:
IR
Quantity:
5 056
Thermal Resistance
l
l
l
l
l
Absolute Maximum Ratings
Description
www.irf.com
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
V
I
I
I
P
P
V
T
R
D
D
DM
J
DS
D
D
GS
@ T
@ T
JA
, T
P-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
®
Power MOSFETs from International Rectifier
Gate-to-Source Voltage
Linear Derating Factor
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
provides thedesigner

GS
GS
ƒ
ƒ
ƒ
@ -4.5V
@ -4.5V
2
3
4
1
1 = D
4 = G
2 = S
3 = S
V
-20V
DSS
G
S
D
HEXFET
22m @V
33m @V
8 = D
7 = S
5 = D
6 = S
R
-55 to +150
8
7
6
5
Max.
DS(on)
83
Max.
0.01
-7.0
-5.7
-20
-28
1.5
1.0
±12
®
GS
GS
IRF7707
Power MOSFET
max
= -4.5V
= -2.5V
TSSOP-8
PD -93996
-
-
7.0A
6.0A
Units
Units
I
W/°C
°C/W
D
°C
W
W
V
V
A
1
10/04/00

Related parts for IRF7707TR

IRF7707TR Summary of contents

Page 1

... Available in Tape & Reel Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- provides thedesigner national Rectifier is well known for, with an extremely efficient and reliable device for battery and load management ...

Page 2

IRF7707 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 150 ° 20µs ...

Page 4

IRF7707 3500 1MHz iss rss 2800 oss iss 2100 1400 C oss 700 C ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...

Page 6

IRF7707 0.120 0.080 0.040 -7.0A 0.000 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. ...

Page 7

TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF TSSOP-8 Tape and Reel 8 mm www.irf.com DAT E CODE (YW) T ...

Page 8

IRF7707 TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR JAPAN: K&H Bldg., ...

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