IRF7807VD1 International Rectifier, IRF7807VD1 Datasheet

MOSFET N-CH 30V 8.3A 8-SOIC

IRF7807VD1

Manufacturer Part Number
IRF7807VD1
Description
MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7807VD1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7807VD1

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7807VD1
Manufacturer:
STM
Quantity:
2 773
Company:
Part Number:
IRF7807VD1
Quantity:
2 694
Description
The FETKY
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
• Co-Pack N-channel HEXFET
• Ideal for Synchronous Rectifiers in DC-DC
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
• 100% R
www.irf.com
Absolute Maximum Ratings
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Output Current
(V
Pulsed Drain Current
Power Dissipation
Schottky and Body Diode
Average Forward Current
Junction & Storage Temperature Range
Thermal Resistance
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
and Schottky Diode
Converters Up to 5A Output
GS
≥ 4.5V)
G
Tested
family of Co-Pack HEXFET
Parameter
Parameter
eÃÃÃÃÃÃÃÃÃÃÃ
f
h
eÃh
Power MOSFET
MOSFETs and
25°C
70°C
25°C
70°C
25°C
70°C
FETKY™ MOSFET / SCHOTTKY DIODE
T
Symbol
Symbol
I
J
F
R
R
V
V
I
, T
P
(AV)
I
DM
GS
θJA
θJL
DS
D
D
STG
SO-8
DEVICE CHARACTERISTICS…
R
Q
Q
Q
DS
G
sw
oss
(on)
Typ
–––
–––
-55 to 150
IRF7807VD1
Max
±20
8.3
6.6
2.5
1.6
3.5
2.2
IRF7807VD1
30
66
17mΩ
9.5nC
3.4nC
A/S
A/S
A/S
12nC
G
Max
50
20
1
2
3
4
Top View
PD-94078A
Units
Units
°C/W
8
6
5
7
°C
W
V
A
K/D
K/D
K/D
K/D
D
11/12/03
1

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IRF7807VD1 Summary of contents

Page 1

... J STG Symbol R θJA R θJL PD-94078A IRF7807VD1 1 8 K/D A A/S K A/S K K/D D Top View IRF7807VD1 17mΩ 9.5nC 3.4nC 12nC Max Units 30 V ±20 8.3 A 6.6 66 2.5 W 1.6 3.5 2.2 -55 to 150 °C Typ Max Units ––– 50 °C/W ––– ...

Page 2

... IRF7807VD1 Electrical Characteristics Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain-Source Leakage Current Gate-Source Leakage Current Total Gate Charge* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate-to-Drain Charge Switch Charge ( gs2 gd Output Charge* Gate Resistance Turn-On Delay Time Rise Time ...

Page 3

... P P loss conduction ( = I P loss rms ( + Q gs2    , can be seen from *dissipated primarily in Q1 critical fac- gs2 is formed by the when multiplied by IRF7807VD1 4 Drain Current 1 Gate Voltage Drain Voltage + drive output ) 2 × R ds(on) ) × V ×  ( × V × × V × f oss  ...

Page 4

... IRF7807VD1 For the synchronous MOSFET Q2, R portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the con- trol IC so the gate drive losses become much more significant ...

Page 5

... Fig 7. On-Resistance Vs. Gate Voltage 70 TOP 60 50 BOTTOM 0. 0. 0.8 1 Fig 8. Typical Reverse Output Characteristics IRF7807VD1 7.0A 4.0 6.0 8.0 10.0 12.0 14.0 V GS, Gate -to -Source Voltage (V) VGS 4.5V 3.5V 3.0V 2.5V 2.0V 380µS PULSE WIDTH Tj = 150°C 0.0V ...

Page 6

... IRF7807VD1 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.001 0. Rectangular Pulse Duration (sec 7. 16V Total Gate Charge (nC) G Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Notes: 1. Duty factor ...

Page 7

... Forward Voltage Drop - Fig Typical Forward Voltage Drop Characteristics www.irf.com 100 10 1 0.1 0.01 0.001 0.0001 0 Reverse Current Vs. Reverse Voltage 0.8 1.0 1.2 IRF7807VD1 Tj = 150°C 125°C 100°C 75°C 50°C 25° Reverse Voltage - V R (V) Fig Typical Values ...

Page 8

... IRF7807VD1 SO-8 Package Details 0.25 (.010 0.25 (.010 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com TERMINAL NUMBER 1 FEED DIRECTION 330.00 (12.992) MAX. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 10/03 IRF7807VD1 12.3 ( .484 ) 11.7 ( .461 ) 14.40 ( .566 ) 12.40 ( .488 ) TAC Fax: (310) 252-7903 9 ...

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