IRFR2407TR International Rectifier, IRFR2407TR Datasheet

MOSFET N-CH 75V 42A DPAK

IRFR2407TR

Manufacturer Part Number
IRFR2407TR
Description
MOSFET N-CH 75V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFU2407.pdf (11 pages)

Specifications of IRFR2407TR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR2407TR
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRFR2407TRLPBF
Quantity:
15 045
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRFR2407TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Amily Shenzhen XNWY Technology Co., Ltd Amily Shenzhen XNWY Technology Co., Ltd
Part Number:
IRFR2407TRPBF
0
Description
Seventh Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area.
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Thermal Resistance
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
www.irf.com
D
D
AR
DM
STG
D
GS
AS
AR
J
@ T
@ T
JC
JA
JA
Surface Mount (IRFR2407)
Straight Lead (IRFU2407)
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
@T
For recommended footprint and soldering techniques refer to application note #AN-994
C
C
C
= 25°C
= 100°C
= 25°C
This benefit, combined with the fast
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Power Dissipation
®
Power MOSFETs from
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
IRFR2407
–––
–––
–––
D-Pak
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
D
S
Max.
42
29
0.71
170
110
± 20
130
5.0
25
11
®
IRFU2407
R
Power MOSFET
DS(on)
I-Pak
Max.
V
110
I
1.4
50
D
DSS
= 42A
IRFR2407
IRFU2407
= 0.026
= 75V
PD -93862
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
3/1/00

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IRFR2407TR Summary of contents

Page 1

... Fully Avalanche Rated Description ® Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRFR/U2407 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 100 ° ...

Page 4

IRFR/U2407 4000 0V, C iss = rss = oss = 3000 Ciss 2000 1000 Coss Crss ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 SINGLE PULSE ...

Page 6

IRFR/U2407 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped ...

Page 7

D.U Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET www.irf.com Peak ...

Page 8

IRFR/U2407 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (.2 0 ...

Page 9

I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 10

IRFR/U2407 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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