IRF7534D1TR International Rectifier, IRF7534D1TR Datasheet

IRF7534D1TR

Manufacturer Part Number

IRF7534D1TR

Description

MOSFET P-CH 20V 4.3A MICRO8

Manufacturer

International Rectifier

Series

FETKY™r

Datasheet

1.IRF7534D1.pdf (8 pages)

Specifications of IRF7534D1TR

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

55 mOhm @ 4.3A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

4.3A

Vgs(th) (max) @ Id

1.2V @ 250µA

Gate Charge (qg) @ Vgs

15nC @ 5V

Input Capacitance (ciss) @ Vds

1066pF @ 10V

Power - Max

1.25W

Mounting Type

Surface Mount

Package / Case

Micro8™

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

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Description

The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer

an innovative, board space saving solution for switching regulator and power

management applications. International Rectifier utilizes advanced processing

techniques to achieve extremely low on-resistance per silicon area. Combining this

technology with International Rectifier’s low forward drop Schottky rectifiers results in

an extremely efficient device suitable for use in a wide variety of portable electronics

applications, such as cell phones, PDAs, etc.

The Micro8

board space is at a premium. The low profile (<1.1mm) of the Micro8

fit easily into extremely thin application environments such as portable electronics

Absolute Maximum Ratings

Thermal Resistance

Notes:

‚

„

www.irf.com

dv/dt

Micro8

Available in Tape & Reel

Trench technology

Co-packaged HEXFET

MOSFET and Schottky diode

MOSFET

@ T

Ultra Low On-Resistance

, T

Pulse width

Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)

When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance

STG

-1.2A, di/dt

= 25°C

= 70°C

= 25°C

= 70°C

package makes an ideal device for applications where printed circuit

Footprint

300µs – duty cycle

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Parameter

Maximum Junction-to-Ambient

Linear Derating Factor

100A/µs, V

Gate-to-Source Voltage

Parameter

power

(BR)DSS

, T

„

‚

Max.

@ -4.5V

150°C

„

FETKY MOSFET & Schottky Diode

T op V ie w

will allow it to

-55 to + 150

IRF7534D1

Units

100

Max.

1.25

-4.3

-3.4

-20

-34

0.8

1.1

± 12

Schottky Vf=0.39V

DS(on)

DSS

Micro8

= 0.055

= -20V

PD -93864

mW/°C

Units

°C/W

V/ns

°C

3/22/00

Related parts for IRF7534D1TR

IRF7534D1TR Summary of contents

Page 1

... International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications, such as cell phones, PDAs, etc. ...

Page 2

... Max. Forward voltage drop FM I Max. Reverse Leakage current RM C Max. Junction Capacitance t dv/dt Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET 25°C (unless otherwise specified) J Min. Typ. Max. Units Conditions -20 ––– ––– V ...

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IRF7534D1TR International Rectifier, IRF7534D1TR Datasheet

IRF7534D1TR

Specifications of IRF7534D1TR

Related parts for IRF7534D1TR

IRF7534D1TR Summary of contents

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