STY34NB50 STMicroelectronics, STY34NB50 Datasheet
STY34NB50
Specifications of STY34NB50
Available stocks
Related parts for STY34NB50
STY34NB50 Summary of contents
Page 1
... T Storage Temperature stg T Max. Operating Junction Temperature Pulse width limited by safe operating area June 1998 PowerMESH I DS(on INTERNAL SCHEMATIC DIAGRAM = 100 di/ STY34NB50 MOSFET Max247 Value Unit 500 V 500 21.4 A 136 A 450 W o 3.61 W/ 4.5 V/ns o -65 to 150 C o 150 C 200 ...
Page 2
... STY34NB50 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symbol ...
Page 3
... D GS Test Conditions V = 400 4 (see test circuit, figure 5) Test Conditions di/dt = 100 100 150 DD j (see test circuit, figure 5) Thermal Impedance STY34NB50 Min. Typ. Max 159 223 35 67 Min. Typ. Max 120 168 Min. Typ. Max. 34 136 1.6 950 Unit ns ns ...
Page 4
... STY34NB50 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
Page 5
... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STY34NB50 5/8 ...
Page 6
... STY34NB50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
Page 7
... Max247 MECHANICAL DATA mm DIM. MIN. TYP. A 4.70 A1 2.20 b 1.00 b1 2.00 b2 3.00 c 0.40 D 19.70 e 5.35 E 15.30 L 14.20 L1 3.70 inch MAX. MIN. TYP. 5.30 2.60 1.40 2.40 3.40 0.80 20.30 5.55 15.90 15.20 4.30 STY34NB50 MAX. P025Q 7/8 ...
Page 8
... STY34NB50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...