IRF540 STMicroelectronics, IRF540 Datasheet

MOSFET N-CH 100V 22A TO-220

IRF540

Manufacturer Part Number
IRF540
Description
MOSFET N-CH 100V 22A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of IRF540

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
77 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
870pF @ 25V
Power - Max
85W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2758-5

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DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(
February 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &
IRF540
IRF540
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
Pulse width limited by safe operating area.
Symbol
dv/dt
E
I
V
DM
V
V
P
AS (2)
T
DGR
I
I
T
GS
stg
DS
TYPE
D
D
tot
(
j
(1)
SALES TYPE
LOW GATE CHARGE STripFET™ II POWER MOSFET
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.055
100 V
V
DSS
Parameter
<0.077
R
IRF540&
DS(on)
C
GS
N-CHANNEL 100V - 0.055
= 25°C
GS
= 20 k )
= 0)
MARKING
C
C
22 A
= 25°C
= 100°C
I
D
INTERNAL SCHEMATIC DIAGRAM
1) I
(2) Starting T
TO-220
SD
22A, di/dt 300A/µs, V
PACKAGE
j
= 25
-55 to 175
o
Value
C, I
± 20
0.57
100
100
220
22
15
88
85
9
D
= 12A, V
DD
TO-220
TUBE
DD
V
- 22A TO-220
(BR)DSS
= 30V
1
2
PACKAGING
3
, T
IRF540
j
T
JMAX
W/°C
V/ns
Unit
mJ
°C
W
V
V
V
A
A
A
1/8

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IRF540 Summary of contents

Page 1

... Peak Diode Recovery voltage slope AS (2) E Single Pulse Avalanche Energy T Storage Temperature stg T Max. Operating Junction Temperature j ( Pulse width limited by safe operating area. February 2003 NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 & N-CHANNEL 100V - 0.055 R I DS(on INTERNAL SCHEMATIC DIAGRAM MARKING IRF540& TO-220 = 0) GS ...

Page 2

... IRF540 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (1) ON Symbol Parameter V Gate Threshold Voltage ...

Page 3

... Test Conditions Min 4 (Resistive Load, Figure 10V Test Conditions Min 4 (Resistive Load, Figure 3) Test Conditions Min di/dt = 100A/µ 150° (see test circuit, Figure 5) Thermal Impedance IRF540 Typ. Max. Unit Typ. Max. Unit Typ. Max. Unit 1.3 V 100 ns 375 nC 7.5 A 3/8 ...

Page 4

... IRF540 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . Normalized on Resistance vs Temperature Normalized Breakdown Voltage vs Temperature . IRF540 5/8 ...

Page 6

... IRF540 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... IRF540 inch. TYP. TYP. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 1.137 0.551 0.116 0.620 0.260 0.154 ...

Page 8

... IRF540 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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