STP36NE06 STMicroelectronics, STP36NE06 Datasheet

MOSFET N-CH 60V 36A TO-220

STP36NE06

Manufacturer Part Number
STP36NE06
Description
MOSFET N-CH 60V 36A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP36NE06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2763-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP36NE06
Manufacturer:
ST
Quantity:
5 000
Part Number:
STP36NE06
Manufacturer:
ST
0
Part Number:
STP36NE06FP
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP36NE06FP
Manufacturer:
ST
0
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
July 1998
STP36NE06
STP36NE06FP
Symbol
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
I
V
dv/dt
DM
V
V
V
T
P
DGR
I
I
T
ISO
GS
stg
DS
D
D
tot
TYPE
( )
j
N - CHANNEL 60V - 0.032 - 36A - TO-220/TO-220FP
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
®
DS(on)
V
60 V
60 V
= 0.032
DSS
< 0.040
< 0.040
R
o
C
DS(on)
c
Parameter
GS
= 25
GS
= 20 k )
= 0)
o
C
c
c
36 A
20 A
= 25
= 100
I
D
o
STripFET
C
"
o
C
(
1
) I
SD
INTERNAL SCHEMATIC DIAGRAM
36 A, di/dt
TO-220
STP36NE06
0.66
144
100
300 A/ s, V
36
24
POWER MOSFET
1
STP36NE06FP
2
-65 to 175
3
Value
175
60
60
STP36NE06
DD
7
20
STP36NE06FP
V
(BR)DSS
TO-220FP
2000
0.27
144
20
14
35
, T
j
T
JMAX
1
W/
Unit
V/ns
o
o
2
W
V
V
V
A
A
A
V
C
C
o
3
C
1/9

Related parts for STP36NE06

STP36NE06 Summary of contents

Page 1

... Pulse width limited by safe operating area July 1998 STripFET I DS(on " INTERNAL SCHEMATIC DIAGRAM Parameter = 100 STP36NE06 STP36NE06FP POWER MOSFET TO-220 TO-220FP Value STP36NE06 STP36NE06FP 144 144 100 35 0.66 0.27 2000 7 -65 to 175 175 36 A, di/dt 300 (BR)DSS Unit V/ns ...

Page 2

... STP36NE06FP THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symbol ...

Page 3

... Safe Operating Area for TO-220 Test Conditions =4 4 Test Conditions =4 Test Conditions di/dt = 100 150 Safe Operating Area for TO-220FP STP36NE06FP Min. Typ. Max. Unit 115 ns 250 Min. Typ. Max. Unit Min. Typ. Max. Unit 36 A 144 A 1 245 C 6.5 A 3/9 ...

Page 4

... STP36NE06FP Thermal Impedance for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STP36NE06FP 5/9 ...

Page 6

... STP36NE06FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STP36NE06FP inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 ...

Page 8

... STP36NE06FP DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 8/9 TO-220FP MECHANICAL DATA mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 16 30.6 10.6 16.4 9.3 3 inch MIN. TYP. MAX. 0.173 ...

Page 9

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES . STP36NE06FP 9/9 ...

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