STP80NE06-10 STMicroelectronics, STP80NE06-10 Datasheet

MOSFET N-CH 60V 80A TO-220

STP80NE06-10

Manufacturer Part Number
STP80NE06-10
Description
MOSFET N-CH 60V 80A TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of STP80NE06-10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
10000pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2778-5

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Table 1. General Features
FEATURES SUMMARY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
Size™" strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
Table 2. Order Codes
April 2004
STP80NE06-10
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT
STP80NE06-10
Part Number
Type
DS(on)
V
60 V
= 0.0085 Ω
DSS
unique
< 0.01 Ω
R
P80NE06
DS(on)
Marking
"Single
N-CHANNEL 60V - 0.0085 Ω - 80A TO-220
"SINGLE FEATURE SIZE™" MOSFET
Feature
80 A
I
D
Figure 1. Package
Figure 2. Internal Schematic Diagram
Package
TO-220
STP80NE06-10
TO-220
Packaging
1
2
TUBE
3
REV. 2
1/10

Related parts for STP80NE06-10

STP80NE06-10 Summary of contents

Page 1

... AUTOMOTIVE ENVIRONMENT ■ Table 2. Order Codes Part Number STP80NE06-10 April 2004 N-CHANNEL 60V - 0.0085 Ω - 80A TO-220 "SINGLE FEATURE SIZE™" MOSFET Figure 1. Package I DS(on "Single Feature Figure 2. Internal Schematic Diagram Marking Package TO-220 P80NE06 STP80NE06- TO-220 Packaging TUBE REV. 2 1/10 ...

Page 2

... STP80NE06-10 Table 3. Absolute Maximum Ratings Symbol V Drain-source Voltage ( Drain- gate Voltage (R DGR V Gate-source Voltage GS I Drain Current (cont Drain Current (cont Drain Current (pulsed) ( Total Dissipation at T tot Derating Factor (2) Peak Diode Recovery voltage slope dv/dt T Storage Temperature stg T Max. Operating Junction Temperature j Note: 1 ...

Page 3

... MHz Test Conditions = 4.7 Ω (see test circuit, Figure 16 Test Conditions = 4.7 Ω V (see test circuit, Figure 18) GS STP80NE06-10 Min. Typ. Max. Unit 60 V µA 1 µA 10 ± 100 nA Min. Typ. Max. Unit Ω 8.5 10 Min. Typ. Max. Unit 7600 10000 pF 890 ...

Page 4

... STP80NE06-10 Table 11. Source Drain Diode Symbol Parameter I Source-drain Current SD (1) Source-drain Current I SDM (pulsed) (2) ForwardM On Voltage Reverse Recovery Time rr Q Reverse RecoveryCharge rr I Reverse RecoveryCurrent RRM Note: 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Figure 3 ...

Page 5

... Figure 7. Transconductance Figure 9. Gate Charge vs Gate-source Voltage Figure 11. Normalized Gate Thresold Voltage vs Temperature Figure 8. Static Drain-source On Resistance Figure 10. Capacitance Variations Figure 12. Normalized on Resistance vs Temperature STP80NE06-10 5/10 ...

Page 6

... STP80NE06-10 Figure 13. Source-drain Diode Forward Characteristics 6/10 ...

Page 7

... Figure 14. Unclamped Inductive Load Test Circuit Figure 16. Switching Time Test Circuit For Resistive Load Figure 18. Test Circuit For Inductive Load Swiching And Diode Recovery Times Figure 15. Unclamped Inductive Waveforms Figure 17. Gate Charge Test Circuit STP80NE06-10 7/10 ...

Page 8

... STP80NE06-10 PACKAGE MECHANICAL Table 12. TO-220 Mechanical Data Symbol Min A 4.40 b 0.61 b1 1.15 c 0.49 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ØP 3.75 Q 2.65 Figure 19. TO-220 Package Dimensions Note: Drawing is not to scale. 8/10 millimeters Typ Max 4.60 0.88 1.70 0.70 15 ...

Page 9

... REVISION HISTORY Table 13. Revision History Date Revision February-1998 1 14-Apr-2004 2 Description of Changes First Issue Stylesheet update. No content change. STP80NE06-10 9/10 ...

Page 10

... STP80NE06-10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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