IRF1010EZS International Rectifier, IRF1010EZS Datasheet

IRF1010EZS

Manufacturer Part Number

IRF1010EZS

Description

MOSFET N-CH 60V 75A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF1010EZL.pdf (12 pages)

Specifications of IRF1010EZS

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

8.5 mOhm @ 51A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

4V @ 100µA

Gate Charge (qg) @ Vgs

86nC @ 10V

Input Capacitance (ciss) @ Vds

2810pF @ 25V

Power - Max

140W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF1010EZS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF1010EZS

Manufacturer:

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF1010EZS

Manufacturer:

Quantity:

20 000

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Features

Description

Specifically designed for Automotive applications,

this HEXFET

processing techniques to achieve extremely low

on-resistance per silicon area. Additional fea-

tures of this design are a 175°C junction operat-

ing temperature, fast switching speed and im-

proved repetitive avalanche rating . These fea-

tures combine to make this design an extremely

efficient and reliable device for use in Automotive

applications and a wide variety of other applica-

tions.

HEXFET

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

(tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

Parameter

AUTOMOTIVE MOSFET

@ 10V (Silicon Limited)

@ 10V (See Fig. 9)

@ 10V

(Package Limited)

IRF1010EZ

TO-220AB

HEXFET

300 (1.6mm from case )

See Fig.12a,12b,15,16

Typ.

0.50

–––

10 lbf•in (1.1N•m)

IRF1010EZS

-55 to + 175

Max.

0.90

340

140

± 20

180

IRF1010EZS

Pak

IRF1010EZL

IRF1010EZ

Power MOSFET

DS(on)

Max.

1.11

–––

DSS

= 75A

PD - 94724C

IRF1010EZL

= 8.5m

= 60V

TO-262

Units

W/°C

°C/W

°C

Related parts for IRF1010EZS

IRF1010EZS Summary of contents

Page 1

... Limited Parameter 94724C IRF1010EZ IRF1010EZS IRF1010EZL ® Power MOSFET 60V DSS R = 8.5m DS(on 75A Pak TO-262 IRF1010EZS IRF1010EZL Max. Units 340 140 W 0.90 W/°C ± 180 See Fig.12a,12b,15, - 175 °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. Max. Units – ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ––– DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 1000 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 1 4.5V 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss ...

Page 5

Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 100 TOP Single Pulse BOTTOM 1% Duty Cycle 51A ...

Page 8

SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current ...

Page 9

www.irf.com 9 ...

Page 10

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Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å 5 www.irf.com DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` PUÃ8P9@ Q6SUÃIVH7@S DIU@SI6UDPI6 S@8UDAD@S PBP 96U@Ã8P9@ ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

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