IRFP1405 International Rectifier, IRFP1405 Datasheet

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... HEXFET is a registered trademark of International Rectifier. * θ www.irf.com AUTOMOTIVE MOSFET G ® Parameter @ 10V (Silicon Limited 10V GS @ 10V (Package Limited) ™ Parameter PD - 95810 IRFP1405 ® HEXFET Power MOSFET 55V DSS R = 5.3mΩ DS(on 95A D S TO-247AC Max. Units 160 110 A 95 640 ...

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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 4.5V 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

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0V MHZ C iss = SHORTED C rss = C gd 8000 C oss = Ciss 6000 4000 Coss 2000 ...

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LIMITED BY PACKAGE 150 100 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ...

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D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

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Duty Cycle = Single Pulse 1000 0.01 100 0.05 0. 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 TOP Single Pulse BOTTOM 1% Duty Cycle 500 95A 400 300 200 100 0 25 ...

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D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

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Dimensions are shown in millimeters Notes: T his part marking information applies to devices produced before 02/26/2001 or for parts manufactured in GB. EXAMPLE: THIS IS AN IRFPE30 WITH ASS EMBLY LOT CODE 3A1Q Notes : T his part marking ...

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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...