IRL3705Z International Rectifier, IRL3705Z Datasheet

MOSFET N-CH 55V 75A TO-220AB

IRL3705Z

Manufacturer Part Number
IRL3705Z
Description
MOSFET N-CH 55V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL3705Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 52A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 5V
Input Capacitance (ciss) @ Vds
2880pF @ 25V
Power - Max
130W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL3705Z

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL3705Z
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL3705ZL
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IR
Quantity:
12 500
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Part Number:
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Quantity:
9 000
Part Number:
IRL3705ZPBF
Manufacturer:
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Quantity:
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Part Number:
IRL3705ZPBF
Manufacturer:
IR
Quantity:
8 000
Part Number:
IRL3705ZPBF
Manufacturer:
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Company:
Part Number:
IRL3705ZPBF
Quantity:
2 500
Company:
Part Number:
IRL3705ZPBF
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Part Number:
IRL3705ZS
Manufacturer:
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Quantity:
12 500
Company:
Part Number:
IRL3705ZS
Quantity:
10 000
Part Number:
IRL3705ZSTRLPBF
Manufacturer:
IR
Quantity:
100
Features
l
l
l
l
l
l
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
Description
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
@T
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Power MOSFET utilizes the latest
Ã
Parameter
Parameter
i
AUTOMOTIVE MOSFET
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
j
i
i
(Silicon Limited)
(Package Limited)
h
TO-220AB
G
IRL3705Z
See Fig.12a, 12b, 15, 16
Typ.
HEXFET
300 (1.6mm from case )
0.50
–––
–––
–––
10 lbf
D
S
IRL3705ZS
-55 to + 175
D
y
Max.
in (1.1N
0.88
2
340
130
± 16
120
180
86
61
75
Pak
®
R
IRL3705ZS
IRL3705ZL
Power MOSFET
DS(on)
y
V
m)
IRL3705Z
Max.
1.14
–––
DSS
I
62
40
D
= 75A
PD - 95854A
IRL3705ZL
= 8.0mΩ
= 55V
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRL3705Z Summary of contents

Page 1

... Parameter 95854A IRL3705Z IRL3705ZS IRL3705ZL ® HEXFET Power MOSFET 55V DSS R = 8.0mΩ DS(on 75A Pak TO-262 IRL3705ZS IRL3705ZL Max. Units 340 130 W 0.88 W/°C ± 120 mJ 180 See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1.1N m) Typ. Max. ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 25° 15V ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss ...

Page 5

Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 0.1 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current vs.Pulsewidth 150 TOP Single Pulse BOTTOM 1% Duty Cycle 125 52A 100 ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

www.irf.com 9 ...

Page 10

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Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å 5 www.irf.com Q6SUÃIVH7@S DIU@SI6UDPI6 S@8UDAD@S PBP 96U@Ã8P9@ `@6SÃ&Ã2Ã ((& 6TT@H7 ` X@@FÃ ( ...

Page 12

TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; pulse width limited by ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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