IRF1010Z International Rectifier, IRF1010Z Datasheet

IRF1010Z

Manufacturer Part Number

IRF1010Z

Description

MOSFET N-CH 55V 75A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF1010ZSPBF.pdf (13 pages)

Specifications of IRF1010Z

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

7.5 mOhm @ 75A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

95nC @ 10V

Input Capacitance (ciss) @ Vds

2840pF @ 25V

Power - Max

140W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF1010Z

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF1010Z

Manufacturer:

Quantity:

12 500

Company:

H&T Electronics

Part Number:

IRF1010ZPBF

Quantity:

9 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF1010ZS

Manufacturer:

Quantity:

12 500

Company:

H&T Electronics

Part Number:

IRF1010ZSPBF

Quantity:

10 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRF1010ZSTRLPBF

Current page: 1 of 13
Download datasheet (305Kb)

Specifically designed for Automotive applications,

this HEXFET

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety

of other applications.

Features

Description

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

AS (Thermally limited)

STG

θJC

θCS

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

(Tested )

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Continuous Drain Current, V

= 25°C Power Dissipation

Power MOSFET utilizes the latest

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount)

Ã™

Parameter

™

AUTOMOTIVE MOSFET

@ 10V

(Silicon Limited)

(Package Limited)

TO-220AB

IRF1010Z

HEXFET

See Fig.12a, 12b, 15, 16

Typ.

300 (1.6mm from case )

0.50

–––

10 lbf

IRF1010ZS

-55 to + 175

Max.

in (1.1N

0.90

360

140

± 20

130

180

Pak

Power MOSFET

DS(on)

Max.

1.11

DSS

–––

IRF1010ZS

IRF1010ZL

IRF1010Z

= 75A

PD - 94652A

IRF1010ZL

= 7.5mΩ

= 55V

TO-262

Units

W/°C

°C/W

°C

Related parts for IRF1010Z

IRF1010Z Summary of contents

Page 1

... Parameter 94652A IRF1010Z IRF1010ZS IRF1010ZL ® HEXFET Power MOSFET 55V DSS R = 7.5mΩ DS(on 75A Pak TO-262 IRF1010ZS IRF1010ZL Max. Units 360 140 W 0.90 W/°C ± 130 mJ 180 See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1.1N m) Typ. Max. ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25°C 100 25V 20µs PULSE WIDTH 1 4.0 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 4000 C oss = 3000 Ciss 2000 1000 Coss ...

Page 5

LIMITED BY PACKAGE 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE ...

Page 6

D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 140 TOP Single Pulse BOTTOM 10% Duty Cycle 120 75A 100 ...

Page 8

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ...

Page 10

Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" For GB Production T HIS IS AN ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com IGBT 1- GATE 2- COLLEC- TOR 11 ...

Page 12

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes: Repetitive rating; ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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