MOSFET N-CH 100V 75A D2PAK

 

IRFS4710PBF

Manufacturer Part NumberIRFS4710PBF
DescriptionMOSFET N-CH 100V 75A D2PAK
ManufacturerInternational Rectifier
SeriesHEXFET®
IRFS4710PBF datasheets

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IRFS4710PBF cross reference pin-to-pin replacement

Part numberManufacturerVdsIdPackageConfigurationDatasheet
AP75T10GS  AP75T10GS Advanced Power Electronics Corp. 100V 65A TO-263 Single N AP75T10GS.pdf
AP60T10GS  AP60T10GS Advanced Power Electronics Corp. 100V 57A TO-263 Single N AP60T10GP.pdf
AP85T08GS  AP85T08GS Advanced Power Electronics Corp. 80V 75A TO-263 Single N AP85T08GP.pdf
AP96T07GS-HF  AP96T07GS-HF Advanced Power Electronics Corp. 75V 80A TO-263 Single N AP96T07GS-HF.pdf
AP95T07GS-HF  AP95T07GS-HF Advanced Power Electronics Corp. 75V 80A TO-263 Single N AP95T07GS-HF.pdf
AP75N07GS  AP75N07GS Advanced Power Electronics Corp. 75V 80A TO-263 Single N AP75N07GP.pdf
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Specifications of IRFS4710PBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs14 mOhm @ 45A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C75AVgs(th) (max) @ Id5.5V @ 250µA
Gate Charge (qg) @ Vgs170nC @ 10VInput Capacitance (ciss) @ Vds6160pF @ 25V
Power - Max3.8WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other names*IRFS4710PBF  
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1000
VGS
TOP
15V
12V
10V
8.0V
7.5V
100
7.0V
6.5V
BOTTOM
6.0V
10
1
6.0V
0.1

20µs PULSE WIDTH
T = 25 C
J
0.01
0.1
1
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
1000

°
T = 175 C
J
100
10

T = 25 C
°
J
1

V
DS
20µs PULSE WIDTH
0.1
6.0
7.0
8.0
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
www.irf.com
IRFB/IRFS/IRFL4710PbF

1000
TOP
BOTTOM
100
10
°
1
0.1
10
100
Fig 2. Typical Output Characteristics
3.0

I =
D
2.5
2.0
1.5
1.0
0.5
= 50V
0.0
9.0
10.0
-60 -40 -20 0
Fig 4. Normalized On-Resistance
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
6.0V

20µs PULSE WIDTH
T = 175 C
°
J
1
10
V
, Drain-to-Source Voltage (V)
DS
75A

V
=
10V
GS
20 40 60 80 100 120 140 160 180
°
T , Junction Temperature ( C)
J
Vs. Temperature
100
3

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