STF21NM60N STMicroelectronics, STF21NM60N Datasheet

MOSFET N-CH 600V 17A TO-220FP

STF21NM60N

Manufacturer Part Number
STF21NM60N
Description
MOSFET N-CH 600V 17A TO-220FP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STF21NM60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 50V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5004-5

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Manufacturer:
ST
Quantity:
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ST
Quantity:
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Quantity:
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STF21NM60N
Manufacturer:
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Features
1. Limited by maximum temperature allowed
Application
Description
This series of devices implements the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
February 2008
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Switching applications
STB21NM60N-1
I
STW21NM60N
Type
STB21NM60N
STF21NM60N
STP21NM60N
N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D
2
Order codes
PAK - TO-247 second generation MDmesh™ Power MOSFET
Device summary
(@Tjmax)
650 V
650 V
650 V
650 V
650 V
STP21NM60N-F21NM60N-STW21NM60N
V
DSS
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
R
max
DS(on)
W21NM60N
B21NM60N
B21NM60N
P21NM60N
F21NM60N
Marking
STB21NM60N-STB21NM60N-1
17 A
17 A
17 A
17 A
17 A
I
D
(1)
Rev 7
Figure 1.
TO-220
TO-220FP
Package
TO-220
TO-247
D
I
2
2
PAK
PAK
1
Internal schematic diagram
2
I
2
3
PAK
1 2
TO-220FP
3
TO-247
1
Tape and reel
2
Packaging
3
Tube
Tube
Tube
Tube
1
2
3
D
2
2
PAK -
PAK
www.st.com
1
1/18
3
18

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STF21NM60N Summary of contents

Page 1

... It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N February 2008 STB21NM60N-STB21NM60N-1 R DS(on max < ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source V (BR)DSS breakdown voltage (1) dv/dt Drain source voltage slope Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current ...

Page 5

STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / I²PAK Figure 4. Safe operating area for TO-220FP Figure 6. Safe operating area for TO-247 6/18 STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Figure ...

Page 7

STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Figure 8. Output characteristics Figure 10. Transconductance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Electrical characteristics Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance 7/18 ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics 8/18 STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Figure 15. Normalized on resistance vs Figure 17. Normalized BV temperature vs temperature Dss ...

Page 9

STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N 3 Test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive waveform Figure 19. Gate charge ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and ...

Page 11

STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.49 ...

Page 12

Package mechanical data Dim Dia 12/18 STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N TO-220FP mechanical data mm. Min. Typ Max. 4.40 4.60 2.5 2.7 ...

Page 13

STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Dim TO-262 mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 ...

Page 14

Package mechanical data Dim 14/18 STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 ...

Page 15

STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Dim øP øR S TO-247 mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 ...

Page 16

Packing mechanical data 5 Packing mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 17

STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N 6 Revision history Table 8. Document revision history Date 19-Oct-2005 07-Nov-2005 29-Nov-2005 11-Jan-2007 19-Jan-2007 27-Apr-2007 19-Feb-2008 Revision 1 First release. 2 Modified curves Figure 12 3 Complete version 4 The document has been ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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