IRF634 STMicroelectronics, IRF634 Datasheet

MOSFET N-CH 250V 8A TO-220

IRF634

Manufacturer Part Number
IRF634
Description
MOSFET N-CH 250V 8A TO-220
Manufacturer
STMicroelectronics
Series
MESH OVERLAY™r
Datasheet

Specifications of IRF634

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
51.8nC @ 10V
Input Capacitance (ciss) @ Vds
770pF @ 25V
Power - Max
80W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Order codes
General features
Description
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performance. The new patented
STrip layout coupled with the Company’s
proprietary edge termination structure, makes it
suitable in coverters for lighting applications.
Applications
June 2006
Extremely High dv/dt Capability
100% Avalanche Tested
Switching application
IRF634FP
IRF634
Type
Part number
IRF634FP
IRF634
V
250V
250V
DSS
N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP
R
<0.45Ω
<0.45Ω
DS(on)
IRF634FP
Marking
IRF634
8 A
8 A
I
D
Rev 2
Mesh Overlay™ Power MOSFET
Internal schematic diagram
TO-220FP
Package
TO-220
TO-220
1
2
3
IRF634FP
TO-220FP
Packaging
Tube
Tube
IRF634
1
2
www.st.com
3
1/14
18

Related parts for IRF634

IRF634 Summary of contents

Page 1

... Switching application Order codes Part number IRF634 IRF634FP June 2006 Mesh Overlay™ Power MOSFET R I DS(on) D <0.45Ω <0.45Ω Internal schematic diagram Marking IRF634 IRF634FP Rev 2 IRF634 IRF634FP TO-220 TO-220FP Package Packaging TO-220 Tube TO-220FP Tube 1/14 www.st.com ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 IRF634 - IRF634FP ...

Page 3

... IRF634 - IRF634FP 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuos Drain current (continuos (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) dv/dt Peak diode recovery voltage slope V Insulation withstand voltage (DC) ...

Page 4

... 10V Parameter Test conditions V > D(on 25V 1MHz 125V 4.7Ω 200V 10V GS IRF634 - IRF634FP Min. Typ. Max 250 GS 10 ±100 = 250µ 0.38 0.45 Min. Typ. Max. DS(on)max 770 118 10V 51.8 = 8A, 5.2 14.8 Unit V 1 µA µ Ω Unit ...

Page 5

... IRF634 - IRF634FP Table 6. Source drain diode Symbol Source-drain current I SD Source-drain Current (1) I SDM (pulsed (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220/ DPAK/ D²PAK Figure 3. Safe operating area for TO-220FP Figure 5. Output characterisics 6/14 Figure 2. Thermal impedance for TO-220/ DPAK/ D²PAK Figure 4. Thermal impedance for TO-220FP Figure 6. Transfer characteristics IRF634 - IRF634FP ...

Page 7

... IRF634 - IRF634FP Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/14 ...

Page 8

... Electrical characteristics Figure 13. Source-drain diode forward characteristics 8/14 IRF634 - IRF634FP ...

Page 9

... IRF634 - IRF634FP 3 Test circuit Figure 14. Unclamped Inductive load test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load switching and diode recovery times Figure 15. Unclamped inductive waveform Figure 17. Gate charge test circuit Test circuit 9/14 ...

Page 10

... These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: 10/14 IRF634 - IRF634FP www.st.com ...

Page 11

... IRF634 - IRF634FP DIM L20 L30 øP Q TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2.95 Package mechanical data inch MIN ...

Page 12

... IRF634 - IRF634FP inch MIN. TYP. MAX. 0.173 0.181 0.098 0.106 0.098 0.108 0.017 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.204 0.094 ...

Page 13

... IRF634 - IRF634FP 5 Revision history Table 7. Document revision history Date 21-Jun-2004 28-Jun-2006 Revision 1 Preliminary version 2 New template, no content change Revision history Changes 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com IRF634 - IRF634FP ...

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