STB160NF3LLT4 STMicroelectronics, STB160NF3LLT4 Datasheet - Page 4

• Manufacturer Part Number: STB160NF3LLT4
• Description: MOSFET N-CH 30V 160A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB160NF3LLT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
R
(see
V
V
(see
D
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
DD
G
= 250µA, V
Test conditions
= 4.7Ω V
Test conditions
= 20V
= 20V, T
= ± 16V
= V
= 10V, I
= 4.5V, I
= 15V
= 25V, f = 1MHz,
= 0
= 15V, I
= 24V, I
= 4.5V, R
Figure
Figure
GS
, I
,
13)
14)
D
GS
D
I
D
D
D
C
D
GS
G
= 80A
= 80A
= 160A,
= 250µA
= 80A
= 125°C
= 80A
= 4.5V
= 4.7Ω
=0
Min.
Min.
30
1
0.0028
0.0035
5500
1700
Typ.
Typ.
110
300
350
150
130
50
80
30
45
STB160NF3LL
0.0033
0.0048
Max.
Max.
±100
110
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω
Ω