STB160NF3LLT4 STMicroelectronics, STB160NF3LLT4 Datasheet - Page 3

• Manufacturer Part Number: STB160NF3LLT4
• Description: MOSFET N-CH 30V 160A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB160NF3LLT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB160NF3LL
1
Electrical ratings
Table 1.
1. Current limited by package
2. Pulse width limited by safe operating area.
3. I
4. Starting T
Table 2.
1. for t ≤ 10sec. 1.6mm from case
Rthj-case
Rthj-amb
Symbol
SD
dv/dt
E
V
I
DM
I
I
V
V
AS
T
T
P
D
D
DGR
≤ 160A, di/dt ≤ 100A/µs, V
T
DS
GS
stg
J
tot
(1)
(1)
j
(2)
(4)
(3)
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery avalanche energy
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
D
= 30A, V
DD
=V(
DD
Parameter
BR)DSS
= 15V
C
GS
= 25°C
, T
GS
= 20 kΩ)
j
≤ T
= 0)
JMAX
C
C
= 25°C
= 100°C
(1)
-55 to 175
Value
± 16
160
160
640
300
1.2
30
30
2
2
Electrical ratings
62.5
300
0.5
W/°C
V/ns
Unit
mJ
°C
W
V
V
V
A
A
A
°C/W
°C/W
°C
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