STB160NF3LLT4 STMicroelectronics, STB160NF3LLT4 Datasheet - Page 5

• Manufacturer Part Number: STB160NF3LLT4
• Description: MOSFET N-CH 30V 160A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB160NF3LLT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB160NF3LL
Table 5.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
100A/µs,
V
(see
SD
SD
DD
= 160A, V
= 160A, di/dt =
= 20V, T
Figure
Test conditions
15)
j
GS
= 150°C
= 0
Min.
Electrical characteristics
Typ.
100
250
6
Max.
160
640
1.3
Unit
nC
ns
A
A
V
A
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