MOSFET N-CH 24V 60A DPAK

STD90NH02LT4

Manufacturer Part NumberSTD90NH02LT4
DescriptionMOSFET N-CH 24V 60A DPAK
ManufacturerSTMicroelectronics
SeriesSTripFET™
STD90NH02LT4 datasheet
 


Specifications of STD90NH02LT4

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs6 mOhm @ 30A, 10VDrain To Source Voltage (vdss)24V
Current - Continuous Drain (id) @ 25° C60AVgs(th) (max) @ Id2.5V @ 250µA
Gate Charge (qg) @ Vgs64nC @ 10VInput Capacitance (ciss) @ Vds2850pF @ 15V
Power - Max95WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Lead Free Status / RoHS StatusLead free / RoHS Compliant
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General features
Type
V
DSS
STD90NH02L-1
24V
STD90NH02L
24V
1. Value limited by wire bonding
R
* Q
industry’s benchmark
DS(ON)
g
Conduction losses reduced
Switching losses reduced
Low threshold device
Description
The device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable for the most demanding DC-DC
converter application where high efficiency is to
be achieved.
Applications
Switching application
Order codes
Part number
STD90NH02LT4
STD90NH02L-1
August 2006
N-channel 24V - 0.0052Ω - 60A - DPAK/IPAK
STripFET™ II Power MOSFET
R
I
DS(on)
D
(1)
<0.006Ω
60A
(1)
<0.006Ω
60A
Internal schematic diagram
Marking
D90NH02L
D90NH02L
Rev 6
STD90NH02L
STD90NH02L-1
3
1
DPAK
IPAK
Package
Packaging
DPAK
Tape & reel
IPAK
Tube
3
2
1
1/16
www.st.com
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STD90NH02LT4 Summary of contents

  • Page 1

    ... ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency achieved. Applications ■ Switching application Order codes Part number STD90NH02LT4 STD90NH02L-1 August 2006 N-channel 24V - 0.0052Ω - 60A - DPAK/IPAK STripFET™ II Power MOSFET R I DS(on) D (1) < ...

  • Page 2

    Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 3

    STD90NH02L- STD90NH02L-1 1 Electrical ratings Table 1. Absolute maximum ratings Symbol (1) V Drain-source voltage rating spike V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS (2) I Drain current (continuous Drain ...

  • Page 4

    Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

  • Page 5

    STD90NH02L- STD90NH02L-1 Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. ...

  • Page 6

    Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/16 STD90NH02L- STD90NH02L-1 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance ...

  • Page 7

    STD90NH02L- STD90NH02L-1 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BV ...

  • Page 8

    Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/16 STD90NH02L- STD90NH02L-1 Figure 14. Gate charge test circuit ...

  • Page 9

    STD90NH02L- STD90NH02L-1 4 Appendix A Figure 19. Buck converter: power losses estimation The power losses associated with the FETs in a synchronous buck converter can be estimated using the equations shown in the table below. The formulas give a good ...

  • Page 10

    Appendix A Table 6. Power losses calculation Recovery (1) Pdiode Conductio n Pgate Qoss 1. Dissipated by SW1 during turn-on Table 7. Paramiters meaning Parameter d Q gsth Q gls Pconduction Pswitching Pdiode Pgate P Qoss 10/16 ...

  • Page 11

    STD90NH02L- STD90NH02L-1 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and ...

  • Page 12

    Package mechanical data DIM (L1 12/16 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 ...

  • Page 13

    STD90NH02L- STD90NH02L-1 DIM TO-251 (IPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.2 2.4 0.9 1.1 0.7 1.3 0.64 0.9 5.2 5.4 0.85 0.3 ...

  • Page 14

    Packing mechanical data 6 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 ...

  • Page 15

    STD90NH02L- STD90NH02L-1 7 Revision history Table 8. Revision history Date 097-Sep-2004 03-Aug-2006 Revision 5 Complete document 6 New template, no content change Revision history Changes 15/16 ...

  • Page 16

    ... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...