IXTT1N100 IXYS, IXTT1N100 Datasheet
IXTT1N100
Manufacturer Part Number
IXTT1N100
Description
MOSFET N-CH 1000V 1.5A TO-268
Manufacturer
IXYS
Datasheet
1.IXTH1N100.pdf
(2 pages)
Specifications of IXTT1N100
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
4.5V @ 25µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
480pF @ 25V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.5 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
1.5
Rds(on), Max, Tj=25°c, (?)
11
Ciss, Typ, (pf)
480
Qg, Typ, (nc)
23
Trr, Typ, (ns)
710
Pd, (w)
60
Rthjc, Max, (k/w)
2.3
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTT1N100
Manufacturer:
IXYS
Quantity:
18 000
High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
© 2002 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
Mounting torque (TO-247)
Test Conditions
V
V
V
V
V
Pulse test, t
V
S
J
J
C
C
C
C
J
C
GS
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
GS
, di/dt 100 A/ s, V
DSS
, I
D
D
DC
D
= 250 A
= 25 A
, V
= 1.0A
300 s, duty cycle d
G
= 18
DS
TO-268
TO-247
= 0
GS
= 1 M
T
T
DD
J
J
(T
= 25 C
= 125 C
J
V
= 25 C, unless otherwise specified)
DSS
Advance Technical Information
,
JM
2 %
1000
min.
IXTH 1N100
IXTT 1N100
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
1000
1000
200
150
300
1.5
1.5
20
30
60
4
6
6
6
3
max.
100
500
4.5
25
11
V/ns
mJ
mJ
nA
W
C
C
C
C
A
A
A
V
V
V
V
A
A
V
V
g
g
G = Gate,
S = Source,
TO-247 AD (IXTH)
TO-268 Case Style
Features
Ÿ
Ÿ
Ÿ
Ÿ
Applications
Ÿ
Ÿ
Ÿ
Ÿ
Advantages
Ÿ
Ÿ
International standard packages
High voltage, Low R
process
Rugged polysilicon gate cell structure
Fast switching times
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
High frequency matching
Space savings
High power density
V
R
I
D25
G
DSS
DS(on)
S
D = Drain,
TAB = Drain
= 1000 V
=
=
DS (on)
1.5 A
11
HDMOS
(TAB)
D (TAB)
98886 (1/2)
TM
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IXTT1N100 Summary of contents
Page 1
... GS(th GSS DSS DS DSS 1.0A DS(on Pulse test, t 300 s, duty cycle d © 2002 IXYS All rights reserved Advance Technical Information IXTH 1N100 IXTT 1N100 Maximum Ratings 1000 = 1 M 1000 1 1.5 6 200 DSS 60 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in 300 Characteristic Values ...
Page 2
... S GS Pulse test, t 300 s, duty cycle -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. 0.8 1.5 480 45 ...