IRF7523D1TRPBF International Rectifier, IRF7523D1TRPBF Datasheet

IRF7523D1TRPBF

Manufacturer Part Number

IRF7523D1TRPBF

Description

MOSFET N-CH 30V 2.7A MICRO8

Manufacturer

International Rectifier

Series

FETKY™r

Datasheet

1.IRF7523D1TRPBF.pdf (10 pages)

Specifications of IRF7523D1TRPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

130 mOhm @ 1.7A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

2.7A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

12nC @ 10V

Input Capacitance (ciss) @ Vds

210pF @ 25V

Power - Max

1.25W

Mounting Type

Surface Mount

Package / Case

Micro8™

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7523D1TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 10
Download datasheet (180Kb)

Description

The FETKY

designer an innovative board space saving solution for switching regulator

applications. Generation 5 HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area. Combining this technology

with International Rectifier's low forward drop Schottky rectifiers results in an

extremely efficient device suitable for use in a wide variety of portable electronics

applications like cell phone, PDA, etc.

The new Micro8

the smallest footprint available in an SOIC outline. This makes the Micro8

device for applications where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro8

environments such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings (T

Thermal Resistance Ratings

Notes:

‚

„

www.irf.com

Parameter

dv/dt

θJA

Co-packaged HEXFET

and Schottky Diode

N-Channel HEXFET

Low V

Generation 5 Technology

Micro8

Lead-Free

Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)

Pulse width ≤ 300µs; duty cycle ≤ 2%

When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance

@ T

STG

≤ 1.7A, di/dt ≤ 120A/µs, V

= 25°C

= 70°C

= 25°C

= 70°C

Schottky Rectifier

Footprint

family of co-packaged HEXFETs and Schottky diodes offer the

package, with half the footprint area of the standard SO-8, provides

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Junction-to-Ambient

will allow it to fit easily into extremely thin application

≤ V

Power MOSFET

(BR)DSS

, T

= 25°C unless otherwise noted)

≤ 150°C

„

‚

@10V

FETKY

„

Top View

IRF7523D1PbF

MOSFET / Schottky Diode

an ideal

-55 to +150

Maximum

1.25

± 20

Maximum

2.7

2.1

0.8

6.2

100

Schottky Vf = 0.39V

DS(on)

DSS

Micro8

PD- 95434

= 0.11Ω

= 30V

Units

°C/W

Units

W/°C

V/ns

°C

02/22/05

Related parts for IRF7523D1TRPBF

IRF7523D1TRPBF Summary of contents

Page 1

... Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. ...

Page 2

IRF7523D1PbF MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3. 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS 100 T = 25° 150°C J ...

Page 4

IRF7523D1PbF 2 1.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature .16 .14 . ...

Page 5

1MHz iss rss oss ds gd 300 C iss C oss 200 C rss 100 ...

Page 6

IRF7523D1PbF Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics ...

Page 7

Charge Fig 15a. Basic Gate Charge Waveform Fig 16a. Switching Time Test Circuit V DS 90% 10 Fig 16b. Switching Time Waveforms www.irf.com 12V V GS Fig 15b. Gate Charge ...

Page 8

IRF7523D1PbF + - + - • • • Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ • • • ...

Page 9

Micro8 Package Outline Dimensions are shown in milimeters (inches 0.25 (.010 ...

Page 10

IRF7523D1PbF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES ...

Related keywords

irf7526d1
irf7524d1
irf7524
irf7521d1
irf7521
IRF7523D1TRPBF datasheet
IRF7523D1TRPBF data sheet
IRF7523D1TRPBF pdf datasheet
IRF7523D1TRPBF component
IRF7523D1TRPBF part
IRF7523D1TRPBF distributor
IRF7523D1TRPBF RoHS
IRF7523D1TRPBF datasheet download