IRF6100PBF International Rectifier, IRF6100PBF Datasheet
IRF6100PBF
Specifications of IRF6100PBF
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IRF6100PBF Summary of contents
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... Junction and Storage Temperature Range J, STG Thermal Resistance Symbol Parameter R Junction-to-Ambient θJA R Junction-to-PCB mounted θJ-PCB www.irf.com V DSS -20V 4.5V GS ƒ ƒ ƒ 96012B IRF6100PbF ® HEXFET Power MOSFET R max I DS(on) D 0.065 @V = -4.5V -5.1A Ω GS 0.095 @V = -2.5V -4.1A Ω FlipFET ISOMETRIC Max ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP -7.00V -5.00V -4.50V -2.50V -1.80V -1.50V 10 -1.20V BOTTOM -1.00V 1 -1.00V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...
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1MHz iss rss 1600 oss iss 1200 800 400 C oss C ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL ...
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-5.1A 0.04 0.03 1.0 2.0 3.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic ...
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Temperature ( °C ) Fig 15. Threshold Voltage Vs. Temperature FlipFET™ Part Marking Information www.irf.com -250µA 8 ...
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FlipFET™ Outline Dimension and Tape and Reel (Refer to application note AN-1011 for details about board mounting the 0.8mm ball pitch Flip FET) Ãb# $!# 7 b%d # # #Y b %d ' b"!d !Y 'Ãb"!d T‚ˆ…pr ...