IRF7705GTRPBF International Rectifier, IRF7705GTRPBF Datasheet

IRF7705GTRPBF

Manufacturer Part Number

IRF7705GTRPBF

Description

MOSFET P-CH 30V 8A 8-TSSOP

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7705GTRPBF.pdf (8 pages)

Specifications of IRF7705GTRPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

18 mOhm @ 8A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

88nC @ 10V

Input Capacitance (ciss) @ Vds

2774pF @ 25V

Power - Max

1.5W

Mounting Type

Surface Mount

Package / Case

8-TSSOP

Transistor Polarity

P Channel

Continuous Drain Current Id

-8A

Drain Source Voltage Vds

-30V

On Resistance Rds(on)

18mohm

Rds(on) Test Voltage Vgs

-10V

Rohs Compliant

Yes

Resistance Drain-source Rds (on)

30 mOhms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 8 A

Power Dissipation

1.5 W

Mounting Style

SMD/SMT

Gate Charge Qg

58 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7705GTRPBFTR

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Description

HEXFET

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

signer with an extremely efficient and reliable device

for use in battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

θJA

@ T

Ultra Low On-Resistance

P-Channel MOSFET

Very Small SOIC Package

Low Profile ( < 1.2mm)

Available in Tape & Reel

Lead-Free

Halogen-Free

STG

= 25°C

= 70°C

= 25°C

= 70°C

power MOSFETs from International Rectifier

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation ƒ

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Parameter

provides the de-

@ -10V

!Ã2ÃT

"Ã2ÃT

-30V

Ã2Ã9

Ã2ÃB

DSS

IRF7705GPbF

HEXFET

'Ã2Ã9

&Ã2ÃT

$Ã2Ã9

%Ã2ÃT

DS(on)

-55 to + 150

18 @V

30 @V

Max.

0.012

0.96

-8.0

-6.0

± 20

-30

1.5

max (mW)

= -10V

= -4.5V

Power MOSFET

TSSOP-8

PD- 96142A

-8.0A

-6.0A

Units

W/°C

°C/W

05/14/09

°C

Related parts for IRF7705GTRPBF

IRF7705GTRPBF Summary of contents

Page 1

... Halogen-Free l Description ® HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, signer with an extremely efficient and reliable device for use in battery and load management ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 10 ° 150 ° ...

Page 4

1MHz iss rss 3200 oss iss 2400 1600 800 C oss C ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 ...

Page 6

-8.0A 0.03 0.02 0.01 2.0 3.0 4.0 5.0 6.0 7.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage ...

Page 7

TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! @ DI9@Y 6SF $ r 7 "Y ppp r 'YÃ iii hhh 8 'ÃTVSA G@69Ã6TTDB ...

Page 8

G@) UCDTÃDTÃ6IÃDSA''$! 7A GPUÃ8P9@ TSSOP-8 Tape and Reel Information A@@9Ã9DS@8UDPI 'Ã€€ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 6SUÃIVH7@S 96U@Ã8P9@Ã`XX 6TT@H7G`ÃTDU@Ã8P9@ Ã2ÃGrhqA…rrÃvqvph‡‚… Ã "Å %Ã€€ IPU@T) ÃÃU6Q@ÃÉÃS@@GÃPVUGDI@Ã8PIAPSHTÃUPÃ@D6#' ÃÉÃ@D6$# Data ...

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