STB8NM60N STMicroelectronics, STB8NM60N Datasheet

MOSFET N-CH 600V 7A D2PAK

STB8NM60N

Manufacturer Part Number
STB8NM60N
Description
MOSFET N-CH 600V 7A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STB8NM60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
560pF @ 50V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8771-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB8NM60N
Manufacturer:
ST
0
Part Number:
STB8NM60NT4
Manufacturer:
ST
0
Part Number:
STB8NM60NT4-TR
Manufacturer:
ST
0
Features
1. Limited only by maximum temperature allowed
Application
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
November 2008
STD8NM60N-1
STB8NM60N
STD8NM60N
STP8NM60N
STF8NM60N
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Switching applications
STD8NM60N-1
Type
Order codes
STB8NM60N
STD8NM60N
STP8NM60N
STF8NM60N
N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET
Device summary
(@Tjmax)
650 V
650 V
650 V
650 V
650 V
V
DSS
< 0.65 Ω
< 0.65 Ω
< 0.65 Ω
< 0.65 Ω
< 0.65 Ω
R
max
DS(on)
D8NM60N
D8NM60N
B8NM60N
F8NM60N
P8NM60N
Marking
TO-220, TO-220FP, IPAK, DPAK, D
7 A
7 A
7 A
7 A
7 A
I
D
(1)
Rev 3
Figure 1.
TO-220FP
Package
TO-220
TO-220
DPAK
D²PAK
DPAK
IPAK
1
1
Internal schematic diagram
3
2
3
D²PAK
STx8NM60N
1
3
Tape and reel
Tape and reel
Packaging
Tube
Tube
Tube
TO-220FP
IPAK
www.st.com
2
PAK
1
1
2
1/19
2
3
3
19

Related parts for STB8NM60N

STB8NM60N Summary of contents

Page 1

... Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes STB8NM60N STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N November 2008 TO-220, TO-220FP, IPAK, DPAK, D ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STx8NM60N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS Drain current (continuous °C C Drain current (continuous 100 °C ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25 °C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage (1) Drain-source voltage slope dv/dt Zero gate voltage drain I DSS current (V Gate body leakage current I ...

Page 5

STx8NM60N Table 7. Switching times Symbol t d(on) Turn-on delay time t Rise time r t Turn-off delay time d(off) Fall time t f Table 8. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK Figure 4. Safe operating area for DPAK, IPAK Figure 5. Figure 6. Safe operating area for TO-220FP 6/19 Figure 3. Thermal impedance for TO-220, D²PAK Thermal ...

Page 7

STx8NM60N Figure 8. Output characteristics Figure 10. Transconductance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Electrical characteristics Figure 9. Transfer characteristics Figure 11. Static-drain source on resistance 7/19 ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics 8/19 Figure 15. Normalized on resistance vs temperature Figure 17. Normalized BV DSS STx8NM60N vs temperature ...

Page 9

STx8NM60N 3 Test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive waveform Figure 19. Gate charge test circuit Figure 21. Unclamped inductive ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and ...

Page 11

STx8NM60N Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 ...

Page 12

Package mechanical data Dim 12/19 TO-220FP mechanical data ...

Page 13

STx8NM60N DIM (L1 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 0.80 0.80 o ...

Page 14

Package mechanical data Dim 14/19 D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 ...

Page 15

STx8NM60N DIM TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 4.70 ...

Page 16

Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX 10.4 10.6 B1 12.1 D 1.5 1.6 D1 1.5 E 1.65 1.85 F 7.4 7.6 ...

Page 17

STx8NM60N 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 P1 11.9 12.1 P2 ...

Page 18

Revision history 6 Revision history Table 9. Document revision history Date 29-Aug-2007 07-Jan-2008 21-Nov-2008 18/19 Revision 1 First release I value has been corrected on 2 DSS 3 Added new package, mechanical data. STx8NM60N Changes Table 5: On/off states ...

Page 19

... STx8NM60N Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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