2SK2313 Toshiba, 2SK2313 Datasheet - Page 5

• Manufacturer Part Number: 2SK2313
• Description: MOSFET N-CH 60V 60A 2-16C1B
• Manufacturer: Toshiba

Specifications of 2SK2313

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 5400pF @ 10V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

R
V
G
DD
5
= 25 Ω
= 25 V, L = 398 μH
E
AS
=
1
2
⋅
L
⋅
I
2
⋅
⎛
⎜
⎝
B
2009-09-29
VDSS
2SK2313
B
VDSS
−
V
DD
⎞
⎟
⎠