2SK2550 Toshiba, 2SK2550 Datasheet
2SK2550
Manufacturer Part Number
2SK2550
Description
MOSFET N-CH 50V 45A 2-16C1B
Manufacturer
Toshiba
Datasheet
1.2SK2550.pdf
(3 pages)
Specifications of 2SK2550
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
3.5V @ 1mA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 10V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2550
Manufacturer:
TOS
Quantity:
10 000
Company:
Part Number:
2SK2550
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
DD
= 25 V, T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
= 25°C (initial), L = 71 μH, R
(Note 1)
(Note 2)
: I
: V
DSS
th
= 1.5~3.5 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
DS (ON)
2SK2550
fs
| = 27 S (typ.)
DS
= 24 mΩ (typ.)
= 10 V, I
−55~150
Rating
DS
Max
1.25
G
±20
135
100
115
150
50
50
45
45
10
50
1
= 25 Ω, I
= 50 V)
D
= 1 mA)
AR
°C / W
°C / W
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 45 A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
2-16C1B
2006-11-17
―
―
2SK2550
Unit: mm
Related parts for 2SK2550
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
2SK2550 Summary of contents
Page 1
... Symbol Rating Unit DSS DGR V ±20 V GSS 135 100 115 150 ° −55~150 °C stg Symbol Max Unit R 1.25 ° (ch− ° (ch− Ω 2SK2550 Unit GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) 2006-11-17 ...
Page 2
... V ≈ (Ta = 25°C) Symbol Test Condition I — — DRP DSF μ 2SK2550 Min Typ. Max — — ±10 — — 100 50 — 1.5 — 3.5 — — 1250 — 250 — 700 — 20 — 30 — 40 — 120 — — 22 — ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2SK2550 20070701-EN 2006-11-17 ...