2SK2699 Toshiba, 2SK2699 Datasheet - Page 2

• Manufacturer Part Number: 2SK2699
• Description: MOSFET N-CH 600V 12A 2-16C1B
• Manufacturer: Toshiba

Specifications of 2SK2699

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 10V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
Source−Drain Diode Ratings and Characteristics
Marking
TOSHIBA
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K2699
Characteristics
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
Part No. (or abbreviation code)
Lot No.
Note 4
(Note 1)
(Note 1)
V
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) GSS
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
Q
Q
t
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
V
I
V
I
V
V
V
V
V
I
I
dI
G
D
DR
DR
GS
DS
DS
GS
DS
DS
DD
DR
= 10 mA, V
= ±10 μA, V
Note 4: A line under a Lot No. identifies the indication of product
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
= 12 A, V
= 12 A, V
= 600 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±25 V, V
= 10 V, I
≈ 480 V, V
/ dt = 100 A / μs
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
2
D
D
D
GS
GS
GS
GS
DS
Test Condition
Test Condition
= 1 mA
= 6 A
DS
GS
= 6 A
GS
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
= 10 V, I
—
—
(Ta = 25°C)
D
= 12 A
±30
600
Min
Min
2.0
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2600
Typ.
11.0
Typ.
270
820
270
460
0.5
4.8
—
—
—
—
—
45
75
65
58
37
21
—
—
—
2009-09-29
2SK2699
0.65
−1.7
Max
Max
±10
100
4.0
12
48
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Unit
μA
μA
nC
μC
pF
ns
ns
V
V
V
Ω
S
A
A
V