2SK2699 Toshiba, 2SK2699 Datasheet - Page 5

• Manufacturer Part Number: 2SK2699
• Description: MOSFET N-CH 600V 12A 2-16C1B
• Manufacturer: Toshiba

Specifications of 2SK2699

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 10V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

R
V
G
DD
5
= 25 Ω
= 90 V, L = 7.35 mH
E
AS
=
1
2
⋅
L
⋅
I
2
⋅
⎛
⎜
⎝
B
2009-09-29
2SK2699
VDSS
B
VDSS
−
V
DD
⎞
⎟
⎠