2SK2837

Manufacturer Part Number2SK2837
DescriptionMOSFET N-CH 500V 20A 2-16C1B
ManufacturerToshiba
2SK2837 datasheet
 

Specifications of 2SK2837

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs270 mOhm @ 10A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C20AVgs(th) (max) @ Id4V @ 1mA
Gate Charge (qg) @ Vgs80nC @ 10VInput Capacitance (ciss) @ Vds3720pF @ 10V
Power - Max150WMounting TypeThrough Hole
Package / Case2-16C1B (TO-247 N)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
: I
= 100 μA (max) (V
DSS
Enhancement mode
: V
= 2.0 to 4.0 V (V
th
Absolute Maximum Ratings
Characteristics
Drain−source voltage
Drain−gate voltage (R
= 20 kΩ)
GS
Gate−source voltage
DC (Note 1)
Drain current
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
= 90 V, T
= 25°C (initial), L = 4.08 mH, R
DD
ch
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
2SK2837
: R
= 0.21 Ω (typ.)
DS (ON)
: |Y
| = 17 S (typ.)
fs
= 500 V)
DS
= 10 V, I
= 1 mA)
DS
D
(Ta = 25°C)
Symbol
Rating
Unit
V
500
V
DSS
V
500
V
DGR
V
±30
V
GSS
I
20
A
D
I
80
A
DP
P
150
W
D
E
960
mJ
AS
I
20
A
AR
E
15
mJ
AR
T
150
°C
ch
T
−55 to 150
°C
stg
Symbol
Max
Unit
R
0.833
°C / W
th (ch−c)
R
50
°C / W
th (ch−a)
= 25 Ω, I
= 20 A
G
AR
1
2SK2837
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
2009-09-29

2SK2837 Summary of contents

  • Page 1

    ... Unit V 500 V DSS V 500 V DGR V ±30 V GSS 150 960 150 ° −55 to 150 °C stg Symbol Max Unit R 0.833 ° (ch− ° (ch− Ω 2SK2837 Unit GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) 2009-09-29 ...

  • Page 2

    ... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2SK2837 Min Typ. Max — — ...

  • Page 3

    ... 3 2SK2837 2009-09-29 ...

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    ... 4 2SK2837 2009-09-29 ...

  • Page 5

    ... Ω 4. 2SK2837 1 ⎛ B ⎞ VDSS = ⋅ ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD 2009-09-29 ...

  • Page 6

    ... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2837 2009-09-29 ...