2SK3561 Toshiba, 2SK3561 Datasheet

MOSFET N-CH 500V 8A TO-220SIS

2SK3561

Manufacturer Part Number
2SK3561
Description
MOSFET N-CH 500V 8A TO-220SIS
Manufacturer
Toshiba
Datasheets

Specifications of 2SK3561

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1050pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220 (SIS)
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Power Dissipation Pd
40W
No. Of Pins
3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
= 90 V, T
GS
DC
Pulse (t = 1 ms)
DSS
= 20 kΩ)
th
ch
= 2.0 to 4.0 V (V
= 25°C(initial), L = 8.3 mH, I
(Note 1)
(Note 1)
(Note 2)
= 100 μA (V
DS (ON)
fs
(Ta = 25°C)
| = 6.5 S (typ.)
Symbol
DS
V
V
V
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
AS
AR
stg
D
ch
DS
R
R
D
2SK3561
= 500 V)
Symbol
th (ch-a)
th (ch-c)
= 0.75 Ω (typ.)
= 10 V, I
-55 to 150
D
Rating
AR
500
500
±30
312
150
= 1 mA)
32
40
8
8
4
1
3.125
= 8 A, R
Max
62.5
G
Unit
= 25 Ω
mJ
mJ
°C
°C
°C/W
°C/W
W
V
V
V
A
A
Unit
Weight : 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
1: Gate
2: Drain
3: Source
1
2-10U1B
SC-67
2009-09-29
2SK3561
Unit: mm
2
3

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2SK3561 Summary of contents

Page 1

... Symbol Rating Unit V 500 V DSS V 500 V DGR ± GSS 312 150 ° -55 to 150 °C stg Symbol Max Unit R 3.125 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω 2SK3561 Unit Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ 2009-09-29 ...

Page 2

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2SK3561 Min Typ. Max ⎯ ⎯ ...

Page 3

... D 20 5.25 10、 4. 4.5 4. (V) DRAIN-SOURCE VOLTAGE (V) GATE-SOURCE VOLTAGE V 10 COMMON SOURCE Tc = 25°C PULSE TEST 1 0.1 100 0.1 DRAIN CURRENT I 3 2SK3561 I – COMMON SOURCE 25°C PULSE TEST 5 – COMMON SOURCE Tc = 25℃ PULSE TEST ( – (ON V、15V ...

Page 4

... C iss oss 2 C rss COMMON SOURCE 1 PULSE TEST 0 −80 −40 100 (V) CASE TEMPERATURE Tc (°C) DS 500 V DS 400 300 200 100 0 160 0 TOTAL GATE CHARGE Q 4 2SK3561 I – 25° − −1.2 −0.4 −0.6 −0.8 −1.0 ( – 120 160 DYNAMIC INPUT / OUTPUT ...

Page 5

... P DM Duty = t (ch-c) = 3.125°C/W 1m 10m 100m PULSE WIDTH t (s) w 500 400 300 200 100 CHANNEL TEMPERATURE (INITIAL) 1000 15 V (V) −15 V TEST CIRCUIT = 25 Ω 8.3mH 2SK3561 – 100 125 150 T (° VDSS WAVE FORM ⎛ ⎞ VDSS 2 I ⎜ ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3561 2009-09-29 ...

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