2SK3569 Toshiba, 2SK3569 Datasheet

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2SK3569

Manufacturer Part Number
2SK3569
Description
MOSFET N-CH 600V 10A TO-220SIS
Manufacturer
Toshiba
Datasheets

Specifications of 2SK3569

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1500pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220 (SIS)
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
750mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3569
Manufacturer:
TOSHIBA
Quantity:
34 250
Part Number:
2SK3569
Manufacturer:
NUVOTON
Quantity:
2 300
Part Number:
2SK3569
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
2SK3569
Quantity:
5 000
Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
= 90 V, T
GS
DC
Pulse (t = 1 ms)
DSS
= 20 kΩ)
th
ch
= 2.0 to 4.0 V (V
= 25°C (initial), L = 6.36 mH, I
(Note 1)
(Note 1)
(Note 2)
= 100 μA (max) (V
DS (ON)
fs
(Ta = 25°C)
| = 8.5 S (typ.)
Symbol
V
V
V
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
AS
AR
stg
D
ch
DS
R
R
D
2SK3569
Symbol
th (ch-a)
th (ch-c)
= 0.54 Ω (typ.)
= 10 V, I
DS
= 600 V)
-55 to 150
D
Rating
600
600
±30
363
150
4.5
= 1 mA)
10
40
45
10
AR
1
Max
2.78
62.5
= 10 A, R
Unit
mJ
mJ
°C
°C
°C/W
°C/W
W
G
V
V
V
A
A
Unit
= 25 Ω
Weight : 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
1
1: Gate
2: Drain
3: Source
2-10U1B
SC-67
2010-01-29
2SK3569
2
3
Unit: mm

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2SK3569 Summary of contents

Page 1

... Symbol Rating Unit V 600 V DSS V 600 V DGR ± GSS 363 4 150 ° -55 to 150 °C stg Symbol Max Unit R 2.78 °C/W th (ch-c) R 62.5 °C/W th (ch- 2SK3569 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ Ω 3 2010-01-29 Unit: mm ...

Page 2

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2SK3569 Min Typ. Max ⎯ ⎯ ...

Page 3

... DRAIN CURRENT 4.8 12 4.6 8 4.4 4 (V) DRAIN-SOURCE VOLTAGE (V) GATE-SOURCE VOLTAGE V 10 COMMON SOURCE Tc = 25°C PULSE TEST 1 0.1 100 0.1 DRAIN CURRENT I 3 2SK3569 I – COMMON SOURCE 25°C 6 PULSE TEST 5.5 5.25 5 4. – COMMON SOURCE Tc = 25℃ PULSE TEST 2 ( – I ...

Page 4

... C rss COMMON SOURCE PULSE TEST 0 −80 −40 100 (V) CASE TEMPERATURE Tc (°C) DS 500 400 300 200 100 0 160 200 0 10 TOTAL GATE CHARGE Q 4 2SK3569 I – 25° −1 V −0.4 −0.6 −0.8 −1.0 −1.2 ( – 120 160 DYNAMIC INPUT / OUTPUT CHARACTERISTICS 20 16 ...

Page 5

... P DM Duty = t (ch-c) = 2.78°C/W 1m 10m 100m PULSE WIDTH t (s) w 500 400 300 200 100 CHANNEL TEMPERATURE (INITIAL 1000 (V) −15 V TEST CIRCUIT = 25 Ω 6.36mH 2SK3569 – 100 125 150 T (° VDSS WAVEFORM ⎛ ⎞ VDSS 2 I ⎜ ⎟ = ⋅ ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3569 2010-01-29 ...

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