HAT2165H Renesas Electronics America, HAT2165H Datasheet - Page 3

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HAT2165H

Manufacturer Part Number
HAT2165H
Description
MOSFET N-CH 30V 55A LFPAK
Manufacturer
Renesas Electronics America
Datasheet

Specifications of HAT2165H

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.3 mOhm @ 27.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
55A
Gate Charge (qg) @ Vgs
33nC @ 4.5V
Input Capacitance (ciss) @ Vds
5180pF @ 10V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
LFPAK
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Vgs(th) (max) @ Id
-

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0
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HAT2165H
Silicon N Channel Power MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
Rev.6.00 Sep 20, 2005 page 1 of 7
High speed switching
Capable of 7 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
2. Value at Tch = 25
3. Tc = 25
= 2.5 m typ. (at V
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
10 s, duty cycle
°
C
Item
°
GS
C, Rg
= 10 V)
5
1%
1 2
50
3 4
I
D(pulse)
E
Pch
Symbol
I
AP
AR
V
V
Tstg
ch-C
Tch
I
DSS
GSS
I
DR
Note 2
D
Note 2
Note3
Note1
G
4
D
5
S S S
1 2 3
–55 to +150
Ratings
4.17
±20
220
150
30
55
55
30
90
30
1, 2, 3 Source
4
5
REJ03G0004-0600
Gate
Drain
Sep 20, 2005
°
Unit
C/W
mJ
°
°
W
V
V
A
A
A
A
(Ta = 25°C)
C
C
Rev.6.00

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